X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001)

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships:

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Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

CrystEngComm ◽

10.1039/c5ce01938a ◽

2016 ◽

Vol 18 (4) ◽

pp. 608-615 ◽

Cited By ~ 15

Author(s):

F. Riva ◽

P.-A. Douissard ◽

T. Martin ◽

F. Carlà ◽

Y. Zorenko ◽

...

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Epitaxial Growth ◽

Liquid Phase Epitaxy ◽

High Quality ◽

X Ray

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

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Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

MRS Proceedings ◽

10.1557/proc-279-837 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 4

Author(s):

M. H. Yang ◽

C. P. Flynn

Keyword(s):

Thin Films ◽

Single Crystal ◽

Epitaxial Growth ◽

Bulk Diffusion ◽

Oxygen Atmosphere ◽

Mass Action ◽

X Ray Diffraction ◽

X Ray ◽

Diffusion Studies ◽

Mgo Substrate

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.

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Epitaxial Growth of Cerium Oxide Buffer Layers on MgO, YSZ and Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-619-191 ◽

2000 ◽

Vol 619 ◽

Cited By ~ 1

Author(s):

A. Thorley ◽

S. Gnanarajan ◽

A. Katsaros ◽

N. Savvides

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Buffer Layers ◽

Metal Target ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

X Ray ◽

Sapphire Substrates ◽

Pole Figures ◽

Biaxial Alignment

ABSTRACTWe studied the epitaxial growth of CeO2 thin films deposited onto MgO(100), YSZ(100) and Al2O3(1102 ) (r-plane sapphire) substrates by reactive dc magnetron sputtering of a Ce metal target in an Ar/O2 plasma. The crystalline quality and biaxial alignment of the films was determined using x-ray diffraction techniques (θ-2θ, ω-scans, pole figures, ø-scans). The CeO2/MgO(100) and CeO2/Al2O3(1102) epitaxy was evident at 600°C and developed to nearly perfect biaxial alignment at 850°C with Δø = 5° and 9° respectively. The CeO2/YSZ (100) epitaxy occurred below 300°C while deposition at ≥ 650°C led to single-crystal quality CeO2 films with Δø = 0.2°.

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X-Ray Texture Analysis of Oriented PZT Thin Films

MRS Proceedings ◽

10.1557/proc-433-297 ◽

1996 ◽

Vol 433 ◽

Cited By ~ 2

Author(s):

C. R. Peterson ◽

N. W. Medendorp ◽

E. B. Slamovich ◽

K. J. Bowman

Keyword(s):

Thin Films ◽

Pole Figure ◽

Reasonable Agreement ◽

Quantitative Characterization ◽

Pzt Thin Films ◽

X Ray ◽

Oriented Film ◽

Oriented Films ◽

Organic Decomposition

AbstractPZT thin films with the composition Pb(Zr0.6Ti0 4)O3 were processed via metallo-organic decomposition (MOD) with {111} and {100} orientations. Ferroelectric measurements showed that the {111} and {100} oriented films had remanent polarizations of 19.5 μC/cm2 and 16 μC/cm2, respectively. Both x-ray pole figure analysis and the Harris texture index were used to quantify the degree of {100}, {110}, and {111} orientation in each film, with reasonable agreement between the two methods. The {100} oriented thin film was determined to be 582 times random for the Harris technique versus 522 times random for pole figure analysis, while the {111} oriented film was 41 times random for the Harris technique and 81 times random for pole figure analysis. The axisymmetric texture of the films allow 2-D pole figure analysis to provide a quantitative characterization of film texture.

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Uniaxially aligned poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene] thin films characterized by the X-ray diffraction pole figure technique

Journal of Applied Polymer Science ◽

10.1002/app.27231 ◽

2007 ◽

Vol 107 (3) ◽

pp. 1817-1821 ◽

Cited By ~ 15

Author(s):

Oliver Werzer ◽

Kurt Matoy ◽

Detlef-M. Smilgies ◽

Michael M. Rothmann ◽

Peter Strohriegl ◽

...

Keyword(s):

Thin Films ◽

Pole Figure ◽

X Ray Diffraction ◽

X Ray ◽

Figure Technique

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Characterization of Epitaxial High Tc Superconductors using a Parallel Beam X-Ray Diffractometer

Advances in X-ray Analysis ◽

10.1154/s0376030800008855 ◽

1991 ◽

Vol 35 (A) ◽

pp. 205-210 ◽

Cited By ~ 1

Author(s):

E. Houtman ◽

T.W. Ryan ◽

B. David ◽

V. Doormann

Keyword(s):

Thin Films ◽

Phase Composition ◽

Epitaxial Growth ◽

High Tc Superconductors ◽

Parallel Beam ◽

High Tc ◽

X Ray

AbstractMany analytical problems cannot be solved using a single XRD measurement. One example is the epitaxial growth of thin films of High Tc superconductors. To fully characterise such a sample it is necessary to study both the orientation (texture) and the phase composition of the layer.

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