X-Ray Texture Analysis of Oriented PZT Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
C. R. Peterson ◽  
N. W. Medendorp ◽  
E. B. Slamovich ◽  
K. J. Bowman

AbstractPZT thin films with the composition Pb(Zr0.6Ti0 4)O3 were processed via metallo-organic decomposition (MOD) with {111} and {100} orientations. Ferroelectric measurements showed that the {111} and {100} oriented films had remanent polarizations of 19.5 μC/cm2 and 16 μC/cm2, respectively. Both x-ray pole figure analysis and the Harris texture index were used to quantify the degree of {100}, {110}, and {111} orientation in each film, with reasonable agreement between the two methods. The {100} oriented thin film was determined to be 582 times random for the Harris technique versus 522 times random for pole figure analysis, while the {111} oriented film was 41 times random for the Harris technique and 81 times random for pole figure analysis. The axisymmetric texture of the films allow 2-D pole figure analysis to provide a quantitative characterization of film texture.

Author(s):  
Daqun Bao ◽  
Yi Zhang ◽  
Hang Guo

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.


1998 ◽  
Vol 541 ◽  
Author(s):  
Shunxi Wang ◽  
Qingxin Su ◽  
Marc A. Robert ◽  
Thomas A. Rabson

AbstractA low temperature metal-organic decomposition process for depositing LiNbO3 thin films on diamond/Si(100) substrates is reported. X-ray diffraction studies show that the films are highly textured polycrystalline LiNbO3 with a (012) orientation. Scanning electron microscopy analyses reveal that the LiNbO3 thin films have dense, smooth surface without cracks and pores, and adhere very well to the diamond substrates. The grain size in the LiNbO3 thin films is in the range of ∼0.2-0.5 μm. The effect of the processing procedures on the surface morphology of the LiNbO3 films is investigated. Possible reasons for the elimination of microcracks in the LiNbO3 films are discussed.


2002 ◽  
Vol 748 ◽  
Author(s):  
Keisuke Saito ◽  
Toshiyuki Kurosawa ◽  
Takao Akai ◽  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
...  

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.


1997 ◽  
Vol 10 (9) ◽  
pp. 712-716 ◽  
Author(s):  
M Holiastou ◽  
V Psyharis ◽  
D Niarchos ◽  
P Haibach ◽  
U Frey ◽  
...  
Keyword(s):  

2001 ◽  
Vol 121 (3) ◽  
pp. 124-128
Author(s):  
Zhan-Jie Wang ◽  
Wen-Mei Lin ◽  
Ryutaro Maeda

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


Sign in / Sign up

Export Citation Format

Share Document