Surface chemical properties of biopolymers determined by contact angle measurements

1978 ◽  
Vol 256 (3) ◽  
pp. 261-265 ◽  
Author(s):  
K. S. Birdi ◽  
J. Jeppesen
2011 ◽  
Vol 138-139 ◽  
pp. 821-825 ◽  
Author(s):  
Feng Wen ◽  
Yang Cao ◽  
Yu Zhou

Titanium oxide (Ti-O) films have been widely used in the fields of electron, photology and medicine due to its distinctive optical, electrical and chemical properties. In this paper, Ti-O films were synthesized by micro-arc oxidation firstly, and then surface was modified by NaOH alkali solution under different treatment time. The wettabilities of as-prepared films were investigated by contact angle measurements using four common liquids. nanoindentation was adopted to obtain the films’ nanohardness and modulus. The results show that Ti-O films tend towards hydrophilia and its surface energy increased after alkali treatment, but no obvious effects to nanohardness and modulus of Ti-O films. Surface roughness of Ti-O films increases after alkali treatment firstly, but decreased with continuing to increasing the times of alkali treatment.


2012 ◽  
Author(s):  
Narjes Shojaikaveh ◽  
Cas Berentsen ◽  
Susanne Eva Johanne Rudolph-Floter ◽  
Karl Heinz Wolf ◽  
William Richard Rossen

2007 ◽  
Vol 330-332 ◽  
pp. 877-880 ◽  
Author(s):  
E.S. Thian ◽  
J. Huang ◽  
Serena Best ◽  
Zoe H. Barber ◽  
William Bonfield

Crystalline hydroxyapatite (HA) and 0.8 wt.% silicon-substituted HA (SiHA) thin films were produced using magnetron co-sputtering. These films were subjected to contact angle measurements and in vitro cell culture study using human osteoblast-like (HOB) cells. A wettability study showed that SiHA has a lower contact angle, and thus is more hydrophilic in nature, as compared to HA. Consequently, enhanced cell growth was observed on SiHA at all time-points. Furthermore, distinct and well-developed actin filaments could be seen within HOB cells on SiHA. Thus, this work demonstrated that the surface properties of the coating may be modified by the substitution of Si into the HA structure.


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