In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation

2003 ◽  
Vol 82 (5) ◽  
pp. 736-738 ◽  
Author(s):  
H. Tang ◽  
J. A. Bardwell ◽  
J. B. Webb ◽  
S. Rolfe ◽  
Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Treatment ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation

Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

1998 ◽  
Vol 83 (12) ◽  
pp. 7715-7719 ◽  
Author(s):  
A. Vogt ◽  
A. Simon ◽  
H. L. Hartnagel ◽  
J. Schikora ◽  
V. Buschmann ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Formation Mechanism ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
Ohmic Contact Formation

Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

1999 ◽  
Vol 43 (2) ◽  
pp. 435-438 ◽  
Author(s):  
Jong-Lam Lee ◽  
Jong Kyu Kim ◽  
Jae Won Lee ◽  
Yong Jo Park ◽  
Taeil Kim
Keyword(s):  
Surface Treatment ◽  
Ohmic Contact ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation ◽  
Effect Of Surface

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4451-4455 ◽  
Author(s):  
Ichitaro Waki ◽  
Hiroshi Fujioka ◽  
Kanta Ono ◽  
Masaharu Oshima ◽  
Hisayuki Miki ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Vacuum Annealing ◽  
High Vacuum ◽  
Surface Cleaning ◽  
Ultra High Vacuum ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation ◽  
Effect Of Surface
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