Quantum-mechanical effect without force for spinning particles

1971 ◽  
Vol 2 (16) ◽  
pp. 832-834 ◽  
Author(s):  
P. Heaskó
Keyword(s):  
Mechanical Effect ◽  
Quantum Mechanical ◽  
Spinning Particles ◽  
Quantum Mechanical Effect

scholarly journals Gravity induced quantum interference on gravitational wave background

2020 ◽  
Vol 35 (35) ◽  
pp. 2050290
Author(s):  
Mohammad A. Ganjali ◽  
Zainab Sedaghatmanesh
Keyword(s):  
Quantum Mechanics ◽  
Gravitational Wave ◽  
Quantum Interference ◽  
Gravitational Effect ◽  
Mechanical Effect ◽  
Quantum Mechanical ◽  
Quantum Mechanical Effect ◽  
Gravitational Wave Background

Gravity-induced quantum interference is an experiment that exhibits how a gravitational effect appears in quantum mechanics.1 In this famous experiment, gravity was added to the system just classically. In our study, we will do the related calculations on a gravitational wave background. We will argue that the effect of gravitational wave would be detectable in this quantum mechanical effect.

scholarly journals Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 410 ◽  
Author(s):  
Jian Qin ◽  
Quanbin Zhou ◽  
Biyan Liao ◽  
Hong Wang
Keyword(s):  
Mechanical Effect ◽  
Design Tool ◽  
Quantum Mechanical ◽  
Quantum Mechanical Effect ◽  
Poisson Equations ◽  
2Deg Density ◽  
Proposed Model ◽  
Gan Heterostructure ◽  
Lattice Matched ◽  
Subband Structure

A comprehensive model for 2DEG characteristics of InxAl1−xN/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into account. Investigations on the 2DEG density and electron distribution across the heterostructure have been carried out using solutions of coupled 1-D Schrödinger-Poisson equations solved by an improved iterative scheme. The proposed model extends a previous approach allowing for estimating the quantum mechanical effect for a generic InAlN/GaN-based HEMT within the range of the Hartree approximation. A critical AlN thickness (~2.28 nm) is predicted when considering the 2DEG density in dependence on a lattice matched In0.17Al0.83N thickness. The obtained results present in this work provide a guideline for the experimental observation of the subband structure of InAlN/GaN heterostructure and may be used as a design tool for the optimization of that epilayer structure.

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