scholarly journals Gravity induced quantum interference on gravitational wave background

2020 ◽  
Vol 35 (35) ◽  
pp. 2050290
Author(s):  
Mohammad A. Ganjali ◽  
Zainab Sedaghatmanesh

Gravity-induced quantum interference is an experiment that exhibits how a gravitational effect appears in quantum mechanics.1 In this famous experiment, gravity was added to the system just classically. In our study, we will do the related calculations on a gravitational wave background. We will argue that the effect of gravitational wave would be detectable in this quantum mechanical effect.

Author(s):  
Jeffrey A. Barrett

Moving to more subtle experiments, we consider how the standard formulation of quantum mechanics predicts and explains interference phenomena. Tracking the conditions under which one observes interference phenomena leads to the notion of quantum decoherence. We see why one must sharply distinguish between collapse phenomena and decoherence phenomena on the standard formulation of quantum mechanics. While collapses explain determinate measurement records, environmental decoherence just produces more complex, entangled states where the physical systems involved lack ordinary physical properties. We characterize the quantum-mechanical wave function as both an element of a Hilbert space and a complex-valued function over a configuration space. We also discuss how the wave function is interpreted in the standard theory.


Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 410 ◽  
Author(s):  
Jian Qin ◽  
Quanbin Zhou ◽  
Biyan Liao ◽  
Hong Wang

A comprehensive model for 2DEG characteristics of InxAl1−xN/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into account. Investigations on the 2DEG density and electron distribution across the heterostructure have been carried out using solutions of coupled 1-D Schrödinger-Poisson equations solved by an improved iterative scheme. The proposed model extends a previous approach allowing for estimating the quantum mechanical effect for a generic InAlN/GaN-based HEMT within the range of the Hartree approximation. A critical AlN thickness (~2.28 nm) is predicted when considering the 2DEG density in dependence on a lattice matched In0.17Al0.83N thickness. The obtained results present in this work provide a guideline for the experimental observation of the subband structure of InAlN/GaN heterostructure and may be used as a design tool for the optimization of that epilayer structure.


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