Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

1999 ◽  
Vol 42 (5) ◽  
pp. 517-522
Author(s):  
Dapeng Xu ◽  
Rutian Wang ◽  
Hui Yang ◽  
Lianxi Zheng ◽  
Jianbin Li ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Cubic Gan

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer

1987 ◽  
Vol 91 ◽  
Author(s):  
J.W. Lee ◽  
D.K. Bowen ◽  
J.P. Salerno
Keyword(s):  
Incident Angle ◽  
Wafer Surface ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Near Surface ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Plane Diffraction

ABSTRACTIn an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. The x-ray incident angle to wafer surface varied from 3.6 to 9.6 degrees for different {224} planes due to the substrate tilt angle of 3 degrees. The GaAs to Si rocking curve intensity ratio increased significantly as the incident angle decreased. For the diffraction with 3.6 degree incident angle, only the GaAs peak was detected from the 3.5 um thick GaAs on Si wafer and the GaAs peak became narrower. These indicates that this conventional x-ray diffraction technique is applicable for the near surface quality evaluation of GaAs on Si wafers.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Vila ◽  
A. Cornet ◽  
J.R. Morante ◽  
D.I. Westwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Temperature Influence ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTA Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.

Non-Destructive Analysis of Thin III-V Epitaxial Layers Using a Tabletop Double Crystal X-Ray Diffractometer

1990 ◽  
Vol 208 ◽  
Author(s):  
R. N. Sacks
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Glancing Angle ◽  
Destructive Analysis ◽  
Excellent Method ◽  
Commercial Software Package ◽  
Non Destructive

ABSTRACTSome of today's most promising and interesting semiconductor devices use only a few thin epitaxial layers of III-V materials, where each layer may be only 100 to 1,000A thick. There is a need for fast, accurate, non-destructive analysis techniques for these structures. Double-crystal x-ray diffraction has proven to be an excellent method for measuring composition, thickness, interface sharpness, and overall crystalline quality of III-V heterostructures. Data is presented on the use of a Bede QC1 automated table-top double-crystal diffractometer for the analysis of (AI,Ga)As, (ln,Ga)As, and GaAs epitaxial layers grown by Molecular Beam Epitaxy (MBE). It is shown that this technique can directly detect and analyze single layers of (In,Ga)As as thin as 200A, and in some cases, can indirectly detect layers of GaAs or (AI,Ga)As as thin as 100A without unusual measures such as glancing angle diffraction. The rocking curve results are compared with values predicted by RHEED intensity oscillation measurements, and with computer simulations using a commercial software package.

The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

1997 ◽  
Vol 482 ◽  
Author(s):  
L. X. Zheng ◽  
J. W. Liang ◽  
H. Yang ◽  
J. B. Li ◽  
Y. T. Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
High Quality ◽  
Nucleation Layer ◽  
X Ray ◽  
Cubic Gan ◽  
Low Temperature Gaas

AbstractHigh quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10–20nm GaAs nucleation layer grown by ALE.

scholarly journals X-ray diffraction analysis of kaolin M1 and M2 via the Williamson–Hall and Warren–Averbach methods

2021 ◽  
pp. 174751982098472
Author(s):  
Lalmi Khier ◽  
Lakel Abdelghani ◽  
Belahssen Okba ◽  
Djamel Maouche ◽  
Lakel Said
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Low Temperature ◽  
Diffraction Analysis ◽  
Mechanical Resistance ◽  
X Ray Diffraction ◽  
Integral Breadth ◽  
X Ray ◽  
Mullite Phase

Kaolin M1 and M2 studied by X-ray diffraction focus on the mullite phase, which is the main phase present in both products. The Williamson–Hall and Warren–Averbach methods for determining the crystallite size and microstrains of integral breadth β are calculated by the FullProf program. The integral breadth ( β) is a mixture resulting from the microstrains and size effect, so this should be taken into account during the calculation. The Williamson–Hall chart determines whether the sample is affected by grain size or microstrain. It appears very clearly that the principal phase of the various sintered kaolins, mullite, is free from internal microstrains. It is the case of the mixtures fritted at low temperature (1200 °C) during 1 h and also the case of the mixtures of the type chamotte cooks with 1350 °C during very long times (several weeks). This result is very significant as it gives an element of explanation to a very significant quality of mullite: its mechanical resistance during uses at high temperature remains.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

Estimation of the strain state of GexSi1−x/Si strained-layer superlattices by double-crystal X-ray diffraction

1994 ◽  
Vol 141 (1-2) ◽  
pp. 103-108
Author(s):  
X.F. Duan ◽  
K.K. Fung ◽  
Y.M. Chu
Keyword(s):  
Strain State ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals High temperature structural study of decagonal Al-Cu-Rh quasicrystal.

2014 ◽  
Vol 70 (a1) ◽  
pp. C94-C94
Author(s):  
Pawel Kuczera ◽  
Walter Steurer
Keyword(s):  
Structural Changes ◽  
Configurational Entropy ◽  
Lattice Vibrations ◽  
X Ray Diffraction ◽  
Stabilization Mechanism ◽  
X Ray ◽  
Comparative Structure ◽  
The Stability

The structure of d(ecagonal)-Al-Cu-Rh has been studied as a function of temperature by in-situ single-crystal X-ray diffraction in order to contribute to the discussion on energy or entropy stabilization of quasicrystals (QC) [1]. The experiments were performed at 293 K, 1223 K, 1153 K, 1083 K, and 1013 K. A common subset of 1460 unique reflections was used for the comparative structure refinements at each temperature. The results obtained for the HT structure refinements of d-Al-Cu-Rh QC seem to contradict a pure phasonic-entropy-based stabilization mechanism [2] for this QC. The trends observed for the ln func(I(T1 )/I(T2 )) vs.|k⊥ |^2 plots indicate that the best on-average quasiperiodic order exists between 1083 K and 1153 K, however, what that actually means is unclear. It could indicate towards a small phasonic contribution to entropy, but such contribution is not seen in the structure refinements. A rough estimation of the hypothetic phason instability temperature shows that it would be kinetically inaccessible and thus the phase transition to a 12 Å low T structure (at ~800 K) is most likely not phason-driven. Except for the obvious increase in the amplitude of the thermal motion, no other significant structural changes, in particular no sources of additional phason-related configurational entropy, were found. All structures are refined to very similar R-values, which proves that the quality of the refinement at each temperature is the same. This suggests, that concerning the stability factors, some QCs could be similar to other HT complex intermetallic phases. The experimental results clearly show that at least the ~4 Å structure of d-Al-Cu-Rh is a HT phase therefore entropy plays an important role in its stabilisation mechanism lowering the free energy. However, the main source of this entropy is probably not related to phason flips, but rather to lattice vibrations, occupational disorder unrelated to phason flips like split positions along the periodic axis.

Sign in / Sign up

Export Citation Format

Share Document