Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration

2020 ◽  
Vol 14 (1) ◽  
pp. 011005
Author(s):  
Takuya Nakashima ◽  
Emi Kano ◽  
Keita Kataoka ◽  
Shigeo Arai ◽  
Hideki Sakurai ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Ion Implanted

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Optical Activation of Ion Implanted Rare-Earths

1993 ◽  
Vol 301 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
M. Gauneau
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earth Elements ◽  
Rare Earths ◽  
Annealing Temperature ◽  
Implantation Energy ◽  
Optical Activation ◽  
Energy Dose ◽  
The Rare Earth ◽  
Ion Implanted

ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 485-488 ◽  
Author(s):  
Masataka Satoh ◽  
Takeshi Jinushi ◽  
Tohru Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Amorphous Layer ◽  
Doping Profile ◽  
Structural And Electrical Properties ◽  
Defective Region ◽  
Small Change ◽  
Ion Implanted

We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped doping profile (NP: 6 x 1020/cm3, thickness: 400 nm, ion dose: 1.6 x 1016/cm2, room temperature). RBS measurement reveals that the highly defective region is formed by P ion implantation, which remains even after annealing at 1700 oC. X-TEM observation shows the P ion induced amorphous layer is recrystallized to twinned-3C-SiC. After annealing at 1300 oC, a sheet resistance of 950 /sq. and sheet carrier concentration of 1 x 1015/cm2 was obtained. By increasing the annealing temperature from 1500 to 1700 oC, the sheet resistance was drastically decreased to about 200 /sq., while there was a small change in the sheet carrier concentration. For the sample annealed at 1700 oC, the electrical activity of the P impurity was estimated to be about 10 % which is comparable to the case of hot implanted sample.

Raman Scattering and Photoluminescence of Pristine and Ion Implanted Langmuir-Blodgett Polydiacetylene Thin Films

1986 ◽  
Vol 79 ◽  
Author(s):  
F. Kaneko ◽  
M. S. Dresselhaus ◽  
G. Braunstein ◽  
T. Kouno ◽  
Y. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Color Change ◽  
Blue Shift ◽  
Implantation Dose ◽  
Lb Films ◽  
Langmuir Blodgett ◽  
Line Intensities ◽  
Small Peak ◽  
Ion Implanted

AbstractFundamental optical properties of Langmuir-Blodgett polydiacetylene (LB PDA) ultra thin films are investigated. The LB films exhibit a strong absorption peak at about 16000 cm-1 and a weak and broad peak at about 17500 cm-1; the color of the film is blue. After annealing at 90°C, a blue shift of the absorption peaks is observed; that is, the color of the LB films changes from blue to red. The phase transition corresponding to the color change is studied using Raman spectroscopy as a function of annealing temperature. For annealing temperatures between 50 and 60°C, the results show significant change in the ratio of Raman line intensities due to C≡C and C=C stretch modes. Such a transition is also observed for laser annealed LB PDA films. Furthermore, the photoluminescence (PL) properties of pristine (blue), annealed (red) and ion implanted (red) LB PDA films are investigated. The photoluminescence of both pristine and annealed LB PDA films show sharp peaks at about 15500 cm-1. The annealed LB PDA films have an additional small peak or shoulder at about 18000 cm-1. The photoluminescence peaks of red films implanted with 200keV As+ ions are observed at about 16000 cm-1 and become broad with increasing ion implantation dose in the range 1012–1015 cm-2.

scholarly journals Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

2020 ◽  
Vol 1004 ◽  
pp. 698-704
Author(s):  
Roberta Nipoti ◽  
Antonella Parisini ◽  
Virginia Boldrini ◽  
Salvatore Vantaggio ◽  
Marco Gorni ◽  
...  
Keyword(s):  
Annealing Time ◽  
Electron Mobility ◽  
Annealing Temperature ◽  
Source Area ◽  
Source Regions ◽  
Al Distribution ◽  
Van Der Pauw ◽  
Sic Wafer ◽  
Post Implantation ◽  
Ion Implanted

Van der Pauw devices have been fabricated by double ion implantation processes, namely P+ and Al+ co-implantation. Similarly to the source area in a SiC VD-MOSFET, a 5 × 1018 cm-3 P plateau is formed on the top of a buried 3 × 1018 cm-3 Al distribution for electrical isolation from the n- epilayer. The post implantation annealing temperature was 1600 °C. Annealing times equal to 30 min and 300 min have been compared. The increase of the annealing time produces both an increase of electron density as well as electron mobility. For comparison a HPSI 4H-SiC wafer, 1×1020 cm-3 P+ ion implanted and 1700 °C annealed for 30 min was also characterized.

Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate

2007 ◽  
Vol 556-557 ◽  
pp. 579-582 ◽  
Author(s):  
Etsushi Taguchi ◽  
Yu Suzuki ◽  
Masataka Satoh
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Annealing Temperature ◽  
Hall Effect Measurement ◽  
Inductive Heating ◽  
Ar Gas ◽  
P Type ◽  
Ion Implanted

The electrical properties of N ion implanted 3C-SiC(100) have been investigated by means of Hall effect measurement. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 2.4×1015 cm-2 at room temperature, which corresponds to the doping layer with a N concentration of 1×1020 cm-3 and a thickness of 250 nm. The implanted sample is annealed by RF inductive heating annealer at temperature ranging from 1000 to 1500 oC for 10 min in Ar gas flow. The sample annealed at 1000 oC shows the sheet resistance of 1 k./sq. The sheet resistance of the implanted sample is decreased with the increase of annealing temperature. The sample annealed at 1500 oC shows the sheet resistance of 81 ./sq. and the sheet carrier concentration of 1.6×1015 cm-2. The electrical activity of implanted N impurity is estimated to be 68 %, which is much larger than that of N ion implanted 4H-SiC (about 0.9 %). The higher electrical activity of implanted N impurity is attributed to the shallower donor level than that in 4H-SiC.

scholarly journals Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

2022 ◽  
Author(s):  
hironori okumura ◽  
Yasuhiro Watanabe ◽  
Tomohiko Shibata ◽  
Kohei Yoshizawa ◽  
Akira Uedono ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Electrical Conductance ◽  
Impurity Diffusion ◽  
Magnesium Ions ◽  
Sapphire Substrates ◽  
Silicon Implantation ◽  
Oxygen Concentrations ◽  
Ion Implanted

Abstract We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal AlN layers grown on sapphire substrates. By annealing at 1600oC, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300oC, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.

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