Calibration of residual stress difference of MetalMUMPs silicon nitride films

2010 ◽  
Vol 16 (4) ◽  
pp. 625-632 ◽  
Author(s):  
J. S. Chang ◽  
Siyuan He ◽  
X. Wang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Stress Difference ◽  
Silicon Nitride Films

scholarly journals Measurement of the properties of MetalMUMPS® thin films

2021 ◽  
Author(s):  
John Shih-Hua Chang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Stress Gradient ◽  
Nickel Film ◽  
Machining Process ◽  
Stress Difference ◽  
Mems Devices ◽  
Silicon Nitride Films

The metal multi-user micro-electro-mechanical-systems (MEMS) processes (MetalMUMPs®) micro-machining process includes two silicon nitride films, one polysilicon film, and one nickel film for constructing various MEMS devices. This thesis presents property measurements of the metalMUMPs® silicon nitride and nickel films. Fabricated MetalMUMPs® silicon nutride prototypes were used to experimentally determine a Young’s modulus of 209 GPa and a residual stress difference of 169 MPa for the silicon nitride films. A method, which uses the deformations along the width of bi-layered cantilever beams, was proposed to determine the residual stress difference of the two silicon nitride films. Fabricated MetalMUMPs® nickel prototypes were used to experimentally extract a Young’s modulus of 159 GPa and a residual stress gradient of -4.72 MPa/m for the nickel film. A micro bridge mechanism was developed to lift long silicon nitride beams for the determination of the residual stress difference of the two silicon nitride films.

scholarly journals Measurement of the properties of MetalMUMPS® thin films

2021 ◽  
Author(s):  
John Shih-Hua Chang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Stress Gradient ◽  
Nickel Film ◽  
Machining Process ◽  
Stress Difference ◽  
Mems Devices ◽  
Silicon Nitride Films

The metal multi-user micro-electro-mechanical-systems (MEMS) processes (MetalMUMPs®) micro-machining process includes two silicon nitride films, one polysilicon film, and one nickel film for constructing various MEMS devices. This thesis presents property measurements of the metalMUMPs® silicon nitride and nickel films. Fabricated MetalMUMPs® silicon nutride prototypes were used to experimentally determine a Young’s modulus of 209 GPa and a residual stress difference of 169 MPa for the silicon nitride films. A method, which uses the deformations along the width of bi-layered cantilever beams, was proposed to determine the residual stress difference of the two silicon nitride films. Fabricated MetalMUMPs® nickel prototypes were used to experimentally extract a Young’s modulus of 159 GPa and a residual stress gradient of -4.72 MPa/m for the nickel film. A micro bridge mechanism was developed to lift long silicon nitride beams for the determination of the residual stress difference of the two silicon nitride films.

Microbridge Testing of Silicon Oxide/Silicon Nitride Bilayer Films

2000 ◽  
Vol 657 ◽  
Author(s):  
C.-F. Qian ◽  
Y.-J. Su ◽  
M.-H. Zhao ◽  
T.-Y. Zhang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Single Layer ◽  
Bilayer Films ◽  
Silicon Nitride Films ◽  
Small Deflection ◽  
Equivalent Bending Stiffness

ABSTRACTThe present work further develops the microbridge testing method to characterize mechanical properties of bilayer thin films. A closed-form formula for deflection versus load under small deflection is derived with consideration of the substrate deformation and residual stress in each layer. The analysis shows that the solution for bending a bilayer beam is equivalent to that for bending a single-layer beam with an equivalent bending stiffness, an equivalent residual force and a residual moment. One can estimate the Young's modulus and residual stress in a layer if the corresponding values in the other layer are known. The analytic results are confirmed by finite element calculations. The microbridge tests are conducted on low-temperature-silicon oxide (LTO)/silicon nitride bilayer films as well as on silicon nitride single-layer films. All microbridge specimens are prepared by the microfabricating technique. The tests on the single-layer films provide the material properties of the silicon nitride films. Then, applying the proposed method for bilayer films under small deflection yields the Young's modulus of 37 GPa and the residual stress of -148 MPa for LTO films.

Residual stress in silicon nitride films

1976 ◽  
Vol 5 (3) ◽  
pp. 287-298 ◽  
Author(s):  
E. A. Irene
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Silicon Nitride Films

Properties of Ultrathin Amorphous Silicon Nitride Films on III V Semiconductors

1992 ◽  
Vol 284 ◽  
Author(s):  
L.J. Huang ◽  
R. W. M. Kwok ◽  
W. M. Lau ◽  
H. T. Tang ◽  
W. N. Lennard ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Positron Annihilation Spectroscopy ◽  
Air Exposure ◽  
Near Surface ◽  
Oxygen Penetration ◽  
Silicon Nitride Films

ABSTRACTProperties of ultrathin (— lOnm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si (100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500° C also led to changes of the electrical properties in the films but not the substrate.

Thermophysical properties of low-residual stress, Silicon-rich, LPCVD silicon nitride films

1990 ◽  
Vol 23 (1-3) ◽  
pp. 856-860 ◽  
Author(s):  
Carlos H. Mastrangelo ◽  
Yu-Chong Tai ◽  
Richard S. Muller
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Thermophysical Properties ◽  
Silicon Nitride Films

Charging Processes in Silicon Nitride Films for RF-MEMS Capacitive Switches: The Effect of Deposition Method and Film Thickness

2008 ◽  
Author(s):  
George Papaioannou ◽  
Usama Zaghloul ◽  
Robert Plana ◽  
Fabio Coccetti ◽  
Patrick Pons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Rf Mems ◽  
Deposition Method ◽  
Capacitive Switches ◽  
Silicon Nitride Films

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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