scholarly journals Measurement of the properties of MetalMUMPS® thin films

2021 ◽  
Author(s):  
John Shih-Hua Chang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Stress Gradient ◽  
Nickel Film ◽  
Machining Process ◽  
Stress Difference ◽  
Mems Devices ◽  
Silicon Nitride Films

The metal multi-user micro-electro-mechanical-systems (MEMS) processes (MetalMUMPs®) micro-machining process includes two silicon nitride films, one polysilicon film, and one nickel film for constructing various MEMS devices. This thesis presents property measurements of the metalMUMPs® silicon nitride and nickel films. Fabricated MetalMUMPs® silicon nutride prototypes were used to experimentally determine a Young’s modulus of 209 GPa and a residual stress difference of 169 MPa for the silicon nitride films. A method, which uses the deformations along the width of bi-layered cantilever beams, was proposed to determine the residual stress difference of the two silicon nitride films. Fabricated MetalMUMPs® nickel prototypes were used to experimentally extract a Young’s modulus of 159 GPa and a residual stress gradient of -4.72 MPa/m for the nickel film. A micro bridge mechanism was developed to lift long silicon nitride beams for the determination of the residual stress difference of the two silicon nitride films.

scholarly journals Measurement of the properties of MetalMUMPS® thin films

2021 ◽  
Author(s):  
John Shih-Hua Chang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Stress Gradient ◽  
Nickel Film ◽  
Machining Process ◽  
Stress Difference ◽  
Mems Devices ◽  
Silicon Nitride Films

The metal multi-user micro-electro-mechanical-systems (MEMS) processes (MetalMUMPs®) micro-machining process includes two silicon nitride films, one polysilicon film, and one nickel film for constructing various MEMS devices. This thesis presents property measurements of the metalMUMPs® silicon nitride and nickel films. Fabricated MetalMUMPs® silicon nutride prototypes were used to experimentally determine a Young’s modulus of 209 GPa and a residual stress difference of 169 MPa for the silicon nitride films. A method, which uses the deformations along the width of bi-layered cantilever beams, was proposed to determine the residual stress difference of the two silicon nitride films. Fabricated MetalMUMPs® nickel prototypes were used to experimentally extract a Young’s modulus of 159 GPa and a residual stress gradient of -4.72 MPa/m for the nickel film. A micro bridge mechanism was developed to lift long silicon nitride beams for the determination of the residual stress difference of the two silicon nitride films.

Microbridge Testing of Silicon Oxide/Silicon Nitride Bilayer Films

2000 ◽  
Vol 657 ◽  
Author(s):  
C.-F. Qian ◽  
Y.-J. Su ◽  
M.-H. Zhao ◽  
T.-Y. Zhang
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Single Layer ◽  
Bilayer Films ◽  
Silicon Nitride Films ◽  
Small Deflection ◽  
Equivalent Bending Stiffness

ABSTRACTThe present work further develops the microbridge testing method to characterize mechanical properties of bilayer thin films. A closed-form formula for deflection versus load under small deflection is derived with consideration of the substrate deformation and residual stress in each layer. The analysis shows that the solution for bending a bilayer beam is equivalent to that for bending a single-layer beam with an equivalent bending stiffness, an equivalent residual force and a residual moment. One can estimate the Young's modulus and residual stress in a layer if the corresponding values in the other layer are known. The analytic results are confirmed by finite element calculations. The microbridge tests are conducted on low-temperature-silicon oxide (LTO)/silicon nitride bilayer films as well as on silicon nitride single-layer films. All microbridge specimens are prepared by the microfabricating technique. The tests on the single-layer films provide the material properties of the silicon nitride films. Then, applying the proposed method for bilayer films under small deflection yields the Young's modulus of 37 GPa and the residual stress of -148 MPa for LTO films.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Mechanical testing and microstructural characterisation of TiN thin films

1997 ◽  
Vol 505 ◽  
Author(s):  
A. Karimi ◽  
O. R. Shojaei ◽  
J. L. Martin
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Titanium Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Bulge Test ◽  
Tin Films ◽  
Deposition Parameters

ABSTRACTMechanical properties of titanium nitride (TiNx) thin films have been investigated using the bulge test and the depth sensing nanoindentation measurements. The bulge test was performed on the square free standing membranes made by means of standard micromachining of silicon wafers, while the nanoindentation was conducted on the films adhered to their supporting substrate. Thin layeres of titanium nitride (t = 300 – 1000 nm) were deposited in a r. f. magnetron sputtering system on the Si(100) wafers containing a layer of low stress LPCVD silicon nitride (SiNy). The bulge test was first conducted on the silicon nitride film to determine its proper residual stress and Young's modulus. Then, the composite membrane made of TiNx together with underlying silicon nitride was bulged and the related load-displacement variation was measured. Finally, using a simple rule of mixture formula the elastic mechanical properties of TiNx coatings were calculated. Both the Young's modulus and residual stress showed increasing values with negative bias voltage and nitrogen to titanium ratio, but the substrate temperature between 50–570°C was found less significant as compared to the other parameters. Nanoindentation data extracted from dynamically loading-unloading of TiN films converged to the bulge test measurements for compact coatings, but diverged from the bulge test data for porous coatings. Scanning electron microscopy observation of the cross sectioned specimens showed that TiN films first grow by formation of the nanocrystallites of size mostly between 10 – 15 nm. These nanocrystallites give rise to the columnar morphology beyond a thickness of 50–100 nm. The columns change their aspect with deposition parameters, but remain nearly perpendicular to the film surface. Relationship between microstructural evolution of columns and mechanical properties of coatings are discussed in terms of deposition parameters.

scholarly journals Estimation of the Young’s Modulus of Nanometer-Thick Films Using Residual Stress-Driven Bilayer Cantilevers

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 265
Author(s):  
Luis A. Velosa-Moncada ◽  
Jean-Pierre Raskin ◽  
Luz Antonio Aguilera-Cortés ◽  
Francisco López-Huerta ◽  
Agustín L. Herrera-May
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Thick Films ◽  
Stress Gradient ◽  
Chemical Vapor ◽  
Intrinsic Stress ◽  
Pressure Chemical ◽  
Reference Layer

Precise prediction of mechanical behavior of thin films at the nanoscale requires techniques that consider size effects and fabrication-related issues. Here, we propose a test methodology to estimate the Young’s modulus of nanometer-thick films using micromachined bilayer cantilevers. The bilayer cantilevers which comprise a well-known reference layer and a tested film deflect due to the relief of the residual stresses generated during the fabrication process. The mechanical relationship between the measured residual stresses and the corresponding deflections was used to characterize the tested film. Residual stresses and deflections were related using analytical and finite element models that consider intrinsic stress gradients and the use of adherence layers. The proposed methodology was applied to low pressure chemical vapor deposited silicon nitride tested films with thicknesses ranging from 46 nm to 288 nm. The estimated Young’s modulus values varying between 213.9 GPa and 288.3 GPa were consistent with nanoindentation and alternative residual stress-driven techniques. In addition, the dependence of the results on the thickness and the intrinsic stress gradient of the materials was confirmed. The proposed methodology is simple and can be used to characterize diverse materials deposited under different fabrication conditions.

A new bulge test technique for the determination of Young's modulus and Poisson's ratio of thin films

1992 ◽  
Vol 7 (12) ◽  
pp. 3242-3249 ◽  
Author(s):  
J.J. Vlassak ◽  
W.D. Nix
Keyword(s):  
Silicon Nitride ◽  
Aspect Ratio ◽  
Residual Stresses ◽  
Young’S Modulus ◽  
Poisson’S Ratio ◽  
Young's Modulus ◽  
Poisson's Ratio ◽  
Bulge Test ◽  
Test Technique ◽  
Silicon Nitride Films

A new analysis of the deflection of square and rectangular membranes of varying aspect ratio under the influence of a uniform pressure is presented. The influence of residual stresses on the deflection of membranes is examined. Expressions have been developed that allow one to measure residual stresses and Young's moduli. By testing both square and rectangular membranes of the same film, it is possible to determine Poisson's ratio of the film. Using standard micromachining techniques, free-standing films of LPCVD silicon nitride were fabricated and tested as a model system. The deflection of the silicon nitride films as a function of film aspect ratio is very well predicted by the new analysis. Young's modulus of the silicon nitride films is 222 ± 3 GPa and Poisson's ratio is 0.28 ± 0.05. The residual stress varies between 120 and 150 MPa. Young's modulus and hardness of the films were also measured by means of nanoindentation, yielding values of 216 ± 10 GPa and 21.0 ± 0.9 GPa, respectively.

The evaluation of Young's modulus and residual stress of nickel films by microbridge testings

2004 ◽  
Vol 15 (12) ◽  
pp. 2389-2394 ◽  
Author(s):  
Z M Zhou ◽  
Y Zhou ◽  
C S Yang ◽  
J A Chen ◽  
G F Ding ◽  
...  
Keyword(s):  
Residual Stress ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Nickel Films
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