High performance suspended spiral inductor and band-pass filter by wafer level packaging technology

2016 ◽  
Vol 23 (6) ◽  
pp. 2107-2111 ◽  
Author(s):  
Tao Zheng ◽  
Gaowei Xu ◽  
Le Luo
Keyword(s):  
High Performance ◽  
Spiral Inductor ◽  
Band Pass Filter ◽  
Wafer Level ◽  
Pass Filter ◽  
Packaging Technology ◽  
Wafer Level Packaging ◽  
Band Pass

scholarly journals High-Performance RF Balanced Microstrip Mixer Configuration for Cryogenic and Room Temperatures

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 102
Author(s):  
Noy Citron ◽  
Eldad Holdengreber ◽  
Oz Sorkin ◽  
Shmuel E. Schacham ◽  
Eliyahu Farber
Keyword(s):  
High Performance ◽  
Schottky Diodes ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Noise Rejection ◽  
Low Pass ◽  
Hybrid Coupler ◽  
Band Pass ◽  
Simulation Results

A high-performance S-band down-conversion microstrip mixer, for operation from 77 K to 300 K, is described. The balanced mixer combines a 90 degree hybrid coupler, two Schottky diodes, a band pass filter, and a low pass filter. The coupler phase shift drastically improves noise rejection. The circuit was implemented according to the configuration obtained from extensive simulation results based on electromagnetic analysis. The experimental results agreed well with the simulation results, showing a maximum measured insertion loss of 0.4 dB at 2 GHz. The microstrip mixer can be easily adjusted to different frequency ranges, up to about 50 GHz, through the proper choice of microstrip configuration. This novel S-band cryogenic mixer, implemented without resorting to special components, shows a very high performance at liquid nitrogen temperatures, making this mixer very suitable for high-temperature superconductive applications, such as front-ends.

High performance narrow band-pass filter for the NIR/MWIR range

2012 ◽  
Author(s):  
Xian Jun Su ◽  
Wei Wu ◽  
Kai Yan ◽  
Feng Jin Chen ◽  
Chao Meng
Keyword(s):  
High Performance ◽  
Narrow Band ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass

A UHF-band miniaturized LTCC band-pass filter with high performance

2010 ◽  
Author(s):  
Yong-Sheng Dai ◽  
Yu-Hong Guo ◽  
Xiong-Xin Tang ◽  
Yuan-Yun Hu ◽  
Wen-Ming Xie ◽  
...  
Keyword(s):  
High Performance ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass ◽  
Uhf Band

A Complex Band-Pass Filter for Low-Power and High-Performance Transceivers

2021 ◽  
pp. 1-11
Author(s):  
Marco Cavallaro ◽  
Germano Nicollini
Keyword(s):  
Low Power ◽  
High Performance ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass

RF-MEMS tunable interdigitated capacitor and fixed spiral inductor for band pass filter applications

2016 ◽  
Author(s):  
Ladon Ahmed Bade ◽  
John Ojur Dennis ◽  
M. Haris Md Khir ◽  
Wong Peng Wen
Keyword(s):  
Rf Mems ◽  
Spiral Inductor ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Band Pass

scholarly journals Design and Realization of a Compact High-Frequency Band-Pass Filter with Low Insertion Loss Based on a Combination of a Circular-Shaped Spiral Inductor, Spiral Capacitor and Interdigital Capacitor

Electronics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 195 ◽  
Author(s):  
Ki-Hun Lee ◽  
Eun-Seong Kim ◽  
Jun-Ge Liang ◽  
Nam-Young Kim
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Bandpass Filter ◽  
Center Frequency ◽  
Spiral Inductor ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Interdigital Capacitor ◽  
In Series ◽  
Band Pass

In this study, the proposed bandpass filter (BPF) connects an interdigital and a spiral capacitor in series between the two symmetrical halves of a circular intertwined spiral inductor. For the mass production of devices and to achieve a higher accuracy and a better performance compared with other passive technologies, we used integrated passive device (IPD) technology. IPD has been widely used to realize compact BPFs and achieve the abovementioned. The center frequency of the proposed BPF is 1.96 GHz, and the return loss, insertion loss and transmission zero are 26.77 dB, 0.27 dB and 38.12 dB, respectively. The overall dimensions of BPFs manufactured using IPD technology are 984 × 800 μ m 2 , which is advantageous for miniaturization and integration.

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