AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.
A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors