Simulation techniques for predicting current and voltage distribution across electrode surface and electrolyte

2022 ◽  
Author(s):  
Sananth H. Menon ◽  
Jojo Mathew ◽  
E. N. Anandapadmanabhan
Keyword(s):  
Electrode Surface ◽  
Voltage Distribution ◽  
Simulation Techniques

Image Analysis of Intramembrane Particles in Freeze-Fractured Biomembranes Using Computer Simulation Techniques

1975 ◽  
Vol 33 ◽  
pp. 214-215
Author(s):  
D.J. Benefiel ◽  
R.S. Weinstein
Keyword(s):  
Membrane Proteins ◽  
Freeze Fracture ◽  
Integral Membrane Proteins ◽  
Systematic Evaluation ◽  
Intramembrane Particles ◽  
Modeling Methods ◽  
Simulation Techniques ◽  
Freeze Fracture Electron Microscopy ◽  
Fracture Electron ◽  
Computer Simulation Techniques

Intramembrane particles (IMP or MAP) are components of most biomembranes. They are visualized by freeze-fracture electron microscopy, and they probably represent replicas of integral membrane proteins. The presence of MAP in biomembranes has been extensively investigated but their detailed ultrastructure has been largely ignored. In this study, we have attempted to lay groundwork for a systematic evaluation of MAP ultrastructure. Using mathematical modeling methods, we have simulated the electron optical appearances of idealized globular proteins as they might be expected to appear in replicas under defined conditions. By comparing these images with the apearances of MAPs in replicas, we have attempted to evaluate dimensional and shape distortions that may be introduced by the freeze-fracture technique and further to deduce the actual shapes of integral membrane proteins from their freezefracture images.

Σ =13 tilt grain boundary in silicon bicrystal

1990 ◽  
Vol 48 (4) ◽  
pp. 562-563
Author(s):  
M.J. Kim ◽  
Y.L. Chen ◽  
R.W. Carpenter ◽  
J.C. Barry ◽  
G.H. Schwuttke
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Rotation Axis ◽  
Czochralski Method ◽  
High Resolution Electron Microscopy ◽  
Image Simulation ◽  
Simulation Techniques ◽  
Resolution Electron ◽  
The Common ◽  
Tilt Grain Boundary

The structure of grain boundaries (GBs) in metals, semiconductors and ceramics is of considerable interest because of their influence on physical properties. Progress in understanding the structure of grain boundaries at the atomic level has been made by high resolution electron microscopy (HREM) . In the present study, a Σ=13, (510) <001>-tilt grain boundary in silicon was characterized by HREM in conjunction with digital image processing and computer image simulation techniques.The bicrystals were grown from the melt by the Czochralski method, using preoriented seeds. Specimens for TEM observations were cut from the bicrystals perpendicular to the common rotation axis of pure tilt grain boundary, and were mechanically dimpled and then ion-milled to electron transparency. The degree of misorientation between the common <001> axis of the bicrystal was measured by CBED in a Philips EM 400ST/FEG: it was found to be less than 1 mrad. HREM was performed at 200 kV in an ISI-002B and at 400 kv in a JEM-4000EX.

Kinetics of compact layer formation and growth of 1,10-phenanthroline at the electrode surface

1990 ◽  
Vol 87 ◽  
pp. 1597-1607 ◽  
Author(s):  
L Benedetti ◽  
M Borsari ◽  
C Fontanesi ◽  
G Battistuzzi Gavioli
Keyword(s):  
Electrode Surface ◽  
Layer Formation ◽  
Compact Layer ◽  
Kinetics Of

New Detection Method for an Insulation Level Monitoring Device Used in Low-Voltage Distribution Lines

2016 ◽  
Vol 136 (11) ◽  
pp. 878-883 ◽  
Author(s):  
Kazunori Nishimura ◽  
Yusaku Marui ◽  
Satonori Nishimura ◽  
Wataru Sunayama
Keyword(s):  
Detection Method ◽  
Low Voltage ◽  
Monitoring Device ◽  
Voltage Distribution ◽  
Distribution Lines ◽  
Level Monitoring
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