On-chip testing device for electrochemotherapeutic effects on human breast cells

2008 ◽  
Vol 11 (1) ◽  
pp. 151-159 ◽  
Author(s):  
Youn-Suk Choi ◽  
Hong-Bae Kim ◽  
Gil-Sik Kwon ◽  
Je-Kyun Park
Keyword(s):  
Testing Device ◽  
Human Breast ◽  
Breast Cells ◽  
Chip Testing ◽  
On Chip

scholarly journals On-Chip Assessment of Scattering in the Response of Si-Based Microdevices

2021 ◽  
Vol 4 (1) ◽  
pp. 18
Author(s):  
Aldo Ghisi ◽  
Stefano Mariani
Keyword(s):  
Stochastic Model ◽  
Silicon Film ◽  
Testing Device ◽  
Micro Structure ◽  
Progressive Reduction ◽  
Research Activities ◽  
Compliant Part ◽  
Beam Bending ◽  
Chip Testing ◽  
On Chip

The response of micromachines to the external actions is typically affected by a scattering, which is, on its own, induced by their microstructure and by stages of the microfabrication process. The progressive reduction in size of the mechanical components, forced by a path towards (further) miniaturization, has recently enhanced the outcomes of the aforementioned scattering, and provided a burst in research activities to address issues linked to its assessment. In this work, we discuss the features of an on-chip testing device that we purposely designed to efficiently estimate the two major sources of scattering affecting inertial, polysilicon-based micromachines: the morphology of the silicon film constituting the movable parts of the device, and the etch defect or over-etch induced by microfabrication. The coupled electro-mechanical behavior of the statically determinate movable (micro)structure of the on-chip device has been modeled via beam bending theory, within which the aforementioned sources of scattering have been accounted for through local fluctuating fields in the compliant part of the structure itself, namely the supporting spring. The proposed stochastic model is shown to outperform former ones available in the literature, which neglected the simultaneous and interacting effects of the two mentioned sources on the measure response. The model can fully catch the scattering in the C–V plots up to pull-in, hence, also in the nonlinear working regime of the device.

scholarly journals A Stochastic Model to Describe the Scattering in the Response of Polysilicon MEMS

2021 ◽  
Vol 2 (1) ◽  
pp. 95
Author(s):  
Luca Dassi ◽  
Marco Merola ◽  
Eleonora Riva ◽  
Angelo Santalucia ◽  
Andrea Venturelli ◽  
...  
Keyword(s):  
Silicon Film ◽  
Micro Fabrication ◽  
Micro Electro Mechanical Systems ◽  
Local Fluctuations ◽  
Stochastic Framework ◽  
On Line ◽  
Chip Testing ◽  
On Chip ◽  
Time Required ◽  
Polycrystalline Silicon Film

The current miniaturization trend in the market of inertial microsystems is leading to movable device parts with sizes comparable to the characteristic length-scale of the polycrystalline silicon film morphology. The relevant output of micro electro-mechanical systems (MEMS) is thus more and more affected by a scattering, induced by features resulting from the micro-fabrication process. We recently proposed an on-chip testing device, specifically designed to enhance the aforementioned scattering in compliance with fabrication constraints. We proved that the experimentally measured scattering cannot be described by allowing only for the morphology-affected mechanical properties of the silicon films, and etch defects must be properly accounted for too. In this work, we discuss a fully stochastic framework allowing for the local fluctuations of the stiffness and of the etch-affected geometry of the silicon film. The provided semi-analytical solution is shown to catch efficiently the measured scattering in the C-V plots collected through the test structure. This approach opens up the possibility to learn on-line specific features of the devices, and to reduce the time required for their calibration.

scholarly journals Comparative activity of pulsed or continuous estradiol exposure on gene expression and proliferation of normal and tumoral human breast cells

2002 ◽  
Vol 28 (3) ◽  
pp. 165-175 ◽  
Author(s):  
V Cavailles ◽  
A Gompel ◽  
MC Portois ◽  
S Thenot ◽  
N Mabon ◽  
...  
Keyword(s):  
Gene Expression ◽  
Cell Lines ◽  
Hormone Replacement ◽  
Primary Cultures ◽  
Continuous Treatment ◽  
Luciferase Reporter ◽  
Breast Cancer Cell Lines ◽  
Human Breast ◽  
Kinetic Profile ◽  
Breast Cells

Intranasal administration of hormone replacement therapy presents an original plasma kinetic profile with transient estrogen levels giving rise to the concept of pulsed therapy. To further understand the molecular effects of this new therapy, we have compared the effects of pulsed and continuous estradiol treatments on two critical aspects of estradiol action: gene expression and cell proliferation. Cells were stimulated with estradiol as 1-h pulsed or 24-h continuous treatments at concentrations such that the 24-h exposure (concentration x time) was identical in both conditions. In MCF7 cells, the transcriptional activity of estrogen receptors (ER) on a transiently transfected responsive estrogen response element-luciferase reporter construct was shown to be drastically (approximately 10-fold) and similarly stimulated after both treatments. Moreover, the increased mRNA expression of three representative estradiol-sensitive genes (pS2, cathepsin D, progesterone receptor), evaluated by Northern blot, was identical after 1-h pulse with 7 nM estradiol or continuous treatment with 0.29 nM estradiol with the same kinetic profile over 48 h. Proliferation was quantified by a histomorphometric method on primary cultures of human normal breast cells from reduction mammoplasties and using a fluorescence DNA assay in six human breast cancer cell lines which were ER positive or negative. After a 7-day treatment period, estradiol had no effect on the proliferation of the three ER negative cell lines (BT20, MDA MB231, SK BR3) but significantly stimulated the proliferation of the normal cells and of the three tumoral hormone-sensitive cell lines (MCF7, T47D, ZR 75-1); both hormone treatments producing the same increases in cell growth. In conclusion, we have shown that the genomic or proliferative effects of estradiol were identical with pulsed or continuous treatments, thus indicating that estrogenic effects are not strictly related to concentrations but rather to total hormone exposure.

Sign in / Sign up

Export Citation Format

Share Document