The preparation of organic light-emitting diode encapsulation barrier layer by low-temperature plasma-enhanced chemical vapor deposition: a study on the $$\hbox {SiO}_\mathrm{x}\hbox {N}_\mathrm{y}$$ SiO x N y film parameter optimization

2014 ◽  
Vol 27 (3) ◽  
pp. 581-593 ◽  
Author(s):  
Chung-Feng Jeffrey Kuo ◽  
Wei-Lun Lan ◽  
Yu-Cheng Chang ◽  
Kun-Wei Lin
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Film Parameter

Low-Temperature Plasma-Enahanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 44-48 ◽  
Author(s):  
Haiping Liu ◽  
Sughoan Jung ◽  
Yukihiro Fujimura ◽  
Chisato Fukai ◽  
Hajime Shirai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Low Temperature Plasma ◽  
Crystal Silicon ◽  
Temperature Plasma

scholarly journals High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Barrier Structure ◽  
Organic Light Emitting Diode

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

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