Moisture-Resistive Properties of SiNxFilms Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays

2005 ◽  
Vol 44 (4A) ◽  
pp. 1923-1927 ◽  
Author(s):  
Akira Heya ◽  
Toshikazu Niki ◽  
Masahiro Takano ◽  
Yasuto Yonezawa ◽  
Toshiharu Minamikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Light Emitting ◽  
Catalytic Chemical Vapor Deposition ◽  
Organic Light Emitting Diode ◽  
Organic Light

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

scholarly journals High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Barrier Structure ◽  
Organic Light Emitting Diode

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

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