Microstructural characterization of Co-based coating deposited by low power pulse laser cladding

2012 ◽  
Vol 48 (6) ◽  
pp. 2714-2723 ◽  
Author(s):  
A. Farnia ◽  
F. Malek Ghaini ◽  
V. Ocelík ◽  
J. Th. M. De Hosson
Keyword(s):  
Low Power ◽  
Pulse Laser ◽  
Laser Cladding ◽  
Microstructural Characterization ◽  
Power Pulse

Effect of Ta on the microstructure and hardness of Stellite 6 coating deposited by low power pulse laser treatments

2012 ◽  
Vol 213 ◽  
pp. 278-284 ◽  
Author(s):  
A. Farnia ◽  
F. Malek Ghaini ◽  
J.C. Rao ◽  
V. Ocelík ◽  
J.Th.M. De Hosson
Keyword(s):  
Low Power ◽  
Pulse Laser ◽  
Power Pulse ◽  
Stellite 6 ◽  
Laser Treatments

Microstructural characterization of laser cladding of Cu-30Ni

2005 ◽  
Vol 40 (8) ◽  
pp. 2051-2054 ◽  
Author(s):  
Bijaya Adak ◽  
Philip Nash ◽  
Dajun Chen ◽  
Alan Swiglo
Keyword(s):  
Laser Cladding ◽  
Microstructural Characterization

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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