Lead-free p-type Mn:Cs3Cu2I5 perovskite with tunable dual-color emission through room-temperature grinding method

2021 ◽  
Author(s):  
Junfeng Qu ◽  
Shuhong Xu ◽  
Fan Liu ◽  
Zhuyuan Wang ◽  
Haibao Shao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lead Free ◽  
Grinding Method ◽  
Dual Color ◽  
P Type ◽  
Color Emission

Lead-Free Direct Band Gap Double-Perovskite Nanocrystals with Bright Dual-Color Emission

2018 ◽  
Vol 140 (49) ◽  
pp. 17001-17006 ◽  
Author(s):  
Bin Yang ◽  
Xin Mao ◽  
Feng Hong ◽  
Weiwei Meng ◽  
Yuxuan Tang ◽  
...  
Keyword(s):  
Band Gap ◽  
Double Perovskite ◽  
Lead Free ◽  
Perovskite Nanocrystals ◽  
Direct Band Gap ◽  
Dual Color ◽  
Direct Band ◽  
Color Emission

Electrocaloric properties of lead-free ferroelectric ceramic near room temperature

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Hend Kacem ◽  
Ah. Dhahri ◽  
Mohamed Amara Gdaiem ◽  
Z. Sassi ◽  
L. Seveyrat ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ferroelectric Ceramic ◽  
Lead Free

scholarly journals Dual‐Color Emission from Monolithic m ‐Plane Core–Shell InGaN/GaN Quantum Wells

2021 ◽  
pp. 2000148
Author(s):  
Akanksha Kapoor ◽  
Vincent Grenier ◽  
Eric Robin ◽  
Catherine Bougerol ◽  
Gwénolé Jacopin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Core Shell ◽  
Dual Color ◽  
Color Emission

Enhanced electrocaloric strengths at room temperature in (SrxBa1−x)(Sn0.05Ti0.95)O3 lead-free ceramics

2021 ◽  
Vol 871 ◽  
pp. 159519
Author(s):  
Sheng-Guo Lu ◽  
Xiongwei Lin ◽  
Jiang Li ◽  
Dandan Li ◽  
Yingbang Yao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lead Free ◽  
Lead Free Ceramics

Lead-free CsCu2I3 Perovskite Nanostructured Networks Gas Sensor for Selective Detection of Trace Nitrogen Dioxide at Room Temperature

2021 ◽  
pp. 1-1
Author(s):  
Xia Sun ◽  
Jie Yang ◽  
Zhilin Wu ◽  
Gang Meng ◽  
Xuezheng Guo ◽  
...  
Keyword(s):  
Nitrogen Dioxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Lead Free ◽  
Selective Detection

Intrinsic n- and p-Type MgZnO Nanorods for Deep-UV Detection and Room-Temperature Gas Sensing

2015 ◽  
Vol 119 (52) ◽  
pp. 29186-29192 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Yu-Xian Lin ◽  
Jia-Jun Wu
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Uv Detection ◽  
Deep Uv ◽  
P Type

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

scholarly journals Dynamical Spin Injection into p-Type Germanium at Room Temperature

2013 ◽  
Vol 6 (2) ◽  
pp. 023001 ◽  
Author(s):  
Mariko Koike ◽  
Eiji Shikoh ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Shinya Yamada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Dynamical Spin ◽  
P Type

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

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