Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

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Boosting the electrochemical performance of nanoporous CuGe anode by regulating the porous structure and solid electrolyte interface layer through Ni-doping

Applied Surface Science ◽

10.1016/j.apsusc.2021.149868 ◽

2021 ◽

Vol 558 ◽

pp. 149868

Author(s):

Zijun Zhao ◽

Wenqing Ma ◽

Yahui Wang ◽

Yang Lv ◽

Chao Ma ◽

...

Keyword(s):

Electrochemical Performance ◽

Porous Structure ◽

Solid Electrolyte ◽

Interface Layer ◽

Solid Electrolyte Interface ◽

Ni Doping ◽

Electrolyte Interface

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Improvement effect of the MoO3 interface layer on the p-Si-based Schottky diode

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05619-w ◽

2021 ◽

Vol 32 (7) ◽

pp. 9567-9573

Author(s):

Şadan Özden

Keyword(s):

Schottky Diode ◽

Interface Layer ◽

Improvement Effect

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A solution-processed, ultraviolet-irradiation-derived WO3 film as anode interface layer for high-performance non-fullerene organic solar cells

Solar Energy ◽

10.1016/j.solener.2021.01.037 ◽

2021 ◽

Vol 216 ◽

pp. 211-216

Author(s):

Tao Zhan ◽

Peng Ren ◽

Xiaofang Huang ◽

Xiuyun Zhang ◽

Guiting Chen ◽

...

Keyword(s):

Solar Cells ◽

Organic Solar Cells ◽

Ultraviolet Irradiation ◽

High Performance ◽

Interface Layer ◽

Solution Processed

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A Mechanism of Anti-Oxidation Coating Design Based on Inhibition Effect of Interface Layer on Ions Diffusion within Oxide Scale

Coatings ◽

10.3390/coatings11040454 ◽

2021 ◽

Vol 11 (4) ◽

pp. 454

Author(s):

Bo Yu ◽

Ya Liu ◽

Lianqi Wei ◽

Xiaomeng Zhang ◽

Yingchao Du ◽

...

Keyword(s):

Oxide Scale ◽

Energy Barrier ◽

Tetrahedral Site ◽

Interface Layer ◽

Diffusion Behavior ◽

Mullite Phase ◽

Inhibition Effect ◽

Coating Design ◽

Oxidation Effect ◽

Dynamics Method

In this paper, a mechanism of anti-oxidation coating design based on the inhibition effect of the interface layer on the diffusion of ions within oxide scale was introduced. The Fe2+ ions diffusion behavior in Fe3O4, Cr2FeO4, and FeAl2O4 were studied by molecular dynamics method of Nudged elastic bond. As the result shown, Fe2+ ions tended to diffuse through the vacancy at tetrahedral site in Cr2FeO4 and FeAl2O4, but diffuse through the octahedral vacancy in Fe3O4. When temperature ranged from 1073 to 1325 K, the energy barrier of Fe2+ ions diffusion in Cr2FeO4 was higher than that of FeAl2O4, and both of that were still obvious higher than that in Fe3O4. A new anti-oxidation coating was prepared based on the inhibition of interface layer consisted of FeAl2O4 to protect the carbon steel S235JR at 1200 °C for 2 h. The FeAl2O4 region was formed and observed at the interface between coating and Fe element diffusion area, and the mullite phase was distributed outside of the FeAl2O4 region. Comparing to the bare sample, the prepared coating exhibited an excellent anti-oxidation effect.

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Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template

Nano Convergence ◽

10.1186/s40580-021-00262-x ◽

2021 ◽

Vol 8 (1) ◽

Author(s):

Woonbae Sohn ◽

Ki Chang Kwon ◽

Jun Min Suh ◽

Tae Hyung Lee ◽

Kwang Chul Roh ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Spherical Aberration ◽

Van Der Waals ◽

Chemical Vapor ◽

Interface Layer ◽

Van Der Waals Interactions ◽

Strong Interactions ◽

Transition Electron Microscopy ◽

Oxide Substrates

AbstractTwo-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S–O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S–O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S–O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.

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