Electrical Characterization of Al-AlN(PSMBE Grown)-Si MIS Structures

1996 ◽  
Vol 449 ◽  
Author(s):  
Regina Y Krupitskaya ◽  
Gregory W Auner ◽  
Tom E Daley
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Electrical Characterization ◽  
Plasma Source ◽  
Current Leakage ◽  
Different Types ◽  
Mis Structures

ABSTRACTAIN films were grown by plasma source Molecular Beam Epitaxy (PSMBE) on n-type Si(111) substrates under various growth parameters. I-V and C-V-f dependencies of AI-AIN-Si(111) MIS structures were measured. Electrical characterization of MIS structures with PSMBE grown textured AIN thin films as insulator shows that low current leakage can be achieved, although some samples have rectifying I-V dependencies. C-V-f characteristics reveal evidence of the presence of different types of traps. Additional investigations are needed in order to determine the nature of these traps.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of GaAs thin films grown by molecular beam epitaxy on Si-on-insulator

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1078
Author(s):  
Zhu Wenhua ◽  
Lin Chenglu ◽  
Yu Yuehui ◽  
Li Aizhen ◽  
Zou Shichang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Gan Nanowires

scholarly journals Growth of InN By MBE

2000 ◽  
Vol 5 (S1) ◽  
pp. 181-187
Author(s):  
W.-L. Chen ◽  
R. L. Gunshor ◽  
Jung Han ◽  
K. Higashimine ◽  
N. Otsuka
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Series Of Experiments

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Photoluminescence characterization of Zn1−xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 124104 ◽  
Author(s):  
H. Shibata ◽  
H. Tampo ◽  
K. Matsubara ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films
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