scholarly journals Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

2011 ◽  
Vol 51 (2) ◽  
pp. 370-375 ◽  
Author(s):  
Engin Arslan ◽  
Serkan Bütün ◽  
Yasemin Şafak ◽  
Habibe Uslu ◽  
İlke Taşçıoğlu ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Mis Structures

Electrical Characterization of Al-AlN(PSMBE Grown)-Si MIS Structures

1996 ◽  
Vol 449 ◽  
Author(s):  
Regina Y Krupitskaya ◽  
Gregory W Auner ◽  
Tom E Daley
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Electrical Characterization ◽  
Plasma Source ◽  
Current Leakage ◽  
Different Types ◽  
Mis Structures

ABSTRACTAIN films were grown by plasma source Molecular Beam Epitaxy (PSMBE) on n-type Si(111) substrates under various growth parameters. I-V and C-V-f dependencies of AI-AIN-Si(111) MIS structures were measured. Electrical characterization of MIS structures with PSMBE grown textured AIN thin films as insulator shows that low current leakage can be achieved, although some samples have rectifying I-V dependencies. C-V-f characteristics reveal evidence of the presence of different types of traps. Additional investigations are needed in order to determine the nature of these traps.

scholarly journals Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

2018 ◽  
Vol 47 (9) ◽  
pp. 5013-5018 ◽  
Author(s):  
H. García ◽  
M. B. González ◽  
M. M. Mallol ◽  
H. Castán ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Γ Radiation ◽  
Mis Structures

Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures

2001 ◽  
Vol 699 ◽  
Author(s):  
H. Castán ◽  
S. Dueñas ◽  
J. Barbolla ◽  
I. Mártil ◽  
G. González-Díaz
Keyword(s):  
Three Dimensional ◽  
Electrical Characterization ◽  
Quantitative Information ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States ◽  
First Time ◽  
Transient Measurements ◽  
Mis Structures

AbstractAs it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the DIGS spatial and energetical distribution obtained by recording conductance transients at several temperatures (ranging from 77 to 300 K) and several frequencies (ranging from 100 Hz to 200 KHz). These measurements allow us to obtain three-dimensional defect maps of Al/SiNx:H/InP structures browsing ranges of 0.5 eV in energy and 40 Å in depth. Our results show that this technique is a very useful tool for the electrical characterization of MIS structures and reveals itself as very valuable in the III-V semiconductor-field-effect transistor scenario.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

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