Influence of Fast Thermal Treatment on the Electrophysical Properties of Silicon Dioxide

2018 ◽  
Vol 91 (5) ◽  
pp. 1337-1341
Author(s):  
V. A. Pilipenko ◽  
V. A. Solodukha ◽  
V. A. Gorushko
Keyword(s):  
Thermal Treatment ◽  
Silicon Dioxide ◽  
Electrophysical Properties

scholarly journals CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

2017 ◽  
Vol 8 (4) ◽  
pp. 344-356
Author(s):  
V. А. Pilipenko ◽  
V. A. Saladukha ◽  
V. A. Filipenya ◽  
R. I. Vorobey ◽  
O. K. Gusev ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Silicon Dioxide ◽  
Charge Density ◽  
Surface Potential ◽  
Electrophysical Properties ◽  
Kelvin Probe ◽  
Interface Charge ◽  
Kelvin Probe Method ◽  
Silicon Silicon ◽  
Silicon Silicon Dioxide Interface

Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm).Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

LUMINESCENCE STUDIES IN THERMAL OXIDE FILMS WITH Si IMPLANTATION

2001 ◽  
Vol 15 (17n19) ◽  
pp. 704-707
Author(s):  
F. FLORES GRACIA ◽  
J. CARRILLO ◽  
M. ACEVES ◽  
W. CALLEJA ◽  
C. DOMÍNGUEZ ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Ion Implantation ◽  
Silicon Dioxide ◽  
Low Dose ◽  
Light Emission ◽  
Visible Range ◽  
Thermal Treatments ◽  
Photoluminescence Band ◽  
Controversial Subject ◽  
Thermal Oxide

The objective of this work is to investigate the origin of the emission bands of Photo and Cathodo - luminescence (PL, CL) in thermal silicon dioxide films implanted with Silicon. The films were obtained by 150 KeV Si implantation into thennal oxide, with doses of 1×1016 cm-2 and 1×1017 cm-2. Thermal treatments of 0, 30, 60 and 180 minutes in nitrogen at 1100°C were applied. We found light emission in the visible range, the bands change with the ion implantation conditions and thermal treatments. The as implanted samples present photoluminescence bands around 1.95 eV and 2.4 eV for both doses, and they disappear width thermal treatments. After annealing, the low dose samples has a photoluminescence band at 2.6 eV, while those of dose of 1×1017 cm-2 has a band centered at 1.7 eV. The intensity of the bands changes with thermal treatment. The cathodoluminescence bands are at 2.7 eV for both implantation doses in samples with and without theermal treatments. A discussion of the results and conclusions that contribute to better understand this nowadays controversial subject is presented.

scholarly journals EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON

Doklady BGUIR ◽  
2020 ◽  
pp. 81-88
Author(s):  
Ja. A. Solovjov ◽  
V. A. Pilipenko
Keyword(s):  
Thermal Treatment ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Specific Resistance ◽  
Light Flux ◽  
Nickel Film ◽  
Electrophysical Properties ◽  
Nickel Films ◽  
Type Silicon

Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C. Nickel films of about 60 nm thickness were deposited by magnetron sputtering onto the silicon substrates having a resistivity of 0.58 to 0.53 Ohms×cm. The rapid thermal treatment was carried out in the range of 200 to 550 °C under heat balance mode by irradiating the backside of the substrates with non-coherent light flux in nitrogen ambient for 7 seconds. The thickness of the nickel films was determined by scanning electron microscopy. The sheet resistance of the samples was measured by a four-probe method. The Schottky barrier height was determined from I-V plots. It is shown that at a temperatureы of rapid thermal treatment of Ni/n-Si (111) 200–250 °C nickel will be transformed to Ni2Si, increasing in thickness by 1.15–1.33 times, specific resistance increases to 26–30 μOhm×cm, and Schottky barrier height decreases from 0.66 to 0.6 V. At a rapid thermal treatment temperature of 300°C the initial nickel film thickness increases by 1.93 times, the resistivity and Schottky barrier height decrease to 26–30 μOhm×cm and 0.59 V respectively due to the conversion of the Ni2Si into NiSi and the fixation of the barrier height by surface states at the silicidesilicon interface. Rapid thermal treatment of 350–550 °C transforms the original nickel film into NiSi, increases its thickness by 2.26–2.67 times, reduces its resistivity to 15–18 μOhm×cm and increases the Schottky barrier height to 0.62–0.64 V. The minimum defects and better reproducibility of electrophysical properties are characterized by NiSi films formed by rapid thermal treatment of nickel films on n-type silicon at a temperature of 400–450 °C. The results obtained can be used in the technology of integrated electronics products containing rectifying contacts.

scholarly journals Improvement of technology of manufacturing and control of quality of mirrors-reflectors from aluminium alloy

2018 ◽  
Vol 63 (3) ◽  
pp. 351-357 ◽  
Author(s):  
G. V. Sharonov ◽  
G. A. Gusakov ◽  
A. L. Zharin ◽  
A. K. Tyavlovskii ◽  
N. I. Mukhurov
Keyword(s):  
Heat Treatment ◽  
Thermal Treatment ◽  
Contact Potential Difference ◽  
Electron Work Function ◽  
Measuring Transducer ◽  
Radius Of Curvature ◽  
Preliminary Heat Treatment ◽  
Electrophysical Properties ◽  
Diamond Blade

At present, the technology of diamond blade whetting with nano-sized roughness is widely used at the manufaсturing of metal-optical products, first of all, mirror-reflectors for “transportation” of powerful laser energy flows. Optimum material for mirror-reflectors is an aluminum alloy AMg2, which surface purity, is affected by the quality of preliminary mechanical heat treatment during superfinishing treatment by diamond whetting.Preliminary machining of the surface with a carbide cutter and finishing with a diamond cutter (with a radius of curvature of the blade less than 0.05 μm) were performed on a precision lathe of the MK 6501 model with a vertical spindle position on an air bearing. Thermal treatment was carried out in the laboratory electric furnace SNOL 58/350. Various modes of preliminary heat treatment, machining with a carbide cutter and finishing with a diamond cutter of substrates (20×20×7 mm3) were tested. The surface state analysis was carried out using the PMT-3 microhardness tester, the SolverPro P47 atomic-force microscope (AFM), and the experimental probe-electrometry device. The control of the electrophysical parameters of the surface was carried out by recording the distribution of the electron work function (RWF) by the contact potential difference with the processing by the microprocessor measuring transducer of electrostatic potentials. The recorded changes in the RWF characterize the physic-chemical and mechanical parameters of the surface of mirrors and indicate the presence of a different type and nature of defects.Modified preliminary mechanical-thermal treatment allowed to improve the cleanliness of surface treatment of substrates. Finishing nanoscale diamond blade processing, including the complete removal of the surface layer that was disturbed by previous operations, bring to the greatest possible improvement in the quality of the surface in terms of the uniformity of the distribution of its electrophysical properties. As a result, according to the values and changes of the RWF, achievement of the specified performance characteristics of the product surface was monitored in order to optimize the technological processing modes in accordance with the functional designations of the devices.The methods for increasing the efficiency of nanoscale diamond blade processing and performing researches of the electrophysical properties of the surface to control defects in the manufacture of metal reflector mirrors with high reflectivity and radiation strength for operation under extreme conditions.

Pollutant Identification by Selected Area Electron Diffraction

1974 ◽  
Vol 32 ◽  
pp. 532-533
Author(s):  
R. E. Ferrell ◽  
G. G. Paulson ◽  
C. W. Walker
Keyword(s):  
Thermal Treatment ◽  
Electron Diffraction ◽  
Sample Preparation ◽  
Crystal Structures ◽  
Water Samples ◽  
Environmental Samples ◽  
Short Review ◽  
Selected Area Electron Diffraction ◽  
Multiple Component

Selected area electron diffraction (SAD) has been used successfully to determine crystal structures, identify traces of minerals in rocks, and characterize the phases formed during thermal treatment of micron-sized particles. There is an increased interest in the method because it has the potential capability of identifying micron-sized pollutants in air and water samples. This paper is a short review of the theory behind SAD and a discussion of the sample preparation employed for the analysis of multiple component environmental samples.

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