Influence of powder preparation process on piezoelectric properties of PZT sol-gel composite thick films

2008 ◽  
Vol 48 (1-2) ◽  
pp. 135-142 ◽  
Author(s):  
A. Bardaine ◽  
P. Boy ◽  
P. Belleville ◽  
O. Acher ◽  
F. Levassort
Keyword(s):  
Piezoelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Preparation Process ◽  
Powder Preparation

scholarly journals Enhanced ferro-/piezoelectric properties of tape-casting-derived Er3+-doped Ba0.85Ca0.15Ti0.9Zr0.1O3 optoelectronic thick films

2020 ◽  
Vol 9 (6) ◽  
pp. 693-702
Author(s):  
Jie Xu ◽  
Qiling Lu ◽  
Jinfeng Lin ◽  
Cong Lin ◽  
Xinghua Zheng ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Matrix Material ◽  
Tape Casting ◽  
Optoelectronic Devices ◽  
Casting Method ◽  
Pure Perovskite Structure ◽  
The Matrix ◽  
Surface Morphologies

AbstractEr3+-doped Ba0.85Ca0.15Ti0.9Zr0.1O3 (xEr-BCTZ, x = 0, 0.005, 0.01, 0.015) multifunctional thick films were prepared by the tape-casting method, using sol-gel-derived nano-sized powders as the matrix material. The surface morphologies, photoluminescence, and electrical properties were investigated. Dense microstructures with pure perovskite structure were obtained in the thick films. By doping an appropriate amount of Er3−, the samples exhibit superior up-conversion photoluminescence performance and simultaneously enhanced electrical performances. In addition, relatively higher texture fractions (with the largest value of 83.5%) were realized through introducing plate-like BaTiO3 templates to make the thick film grow by the [001]c orientation. And the ferro-/piezoelectric properties of the thick films were further improved, showing potential in the applications of micro-optoelectronic devices.

Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O3 films deposited by the multi-sputtering method: Part II. Piezoelectric properties

2007 ◽  
Vol 22 (5) ◽  
pp. 1373-1377 ◽  
Author(s):  
Chee-Sung Park ◽  
Jae-Wung Lee ◽  
Gun-Tae Park ◽  
Hyoun-Ee Kim ◽  
Jong-Jin Choi
Keyword(s):  
Seed Layer ◽  
Piezoelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Columnar Structure ◽  
Grain Structure ◽  
Radio Frequency Magnetron Sputtering ◽  
Columnar Microstructure ◽  
Small Grains ◽  
Columnar Grain

Highly dense and crack-free Pb(Zr,Ti)O3 (PZT) thick films with a controlled microstructure and orientation were deposited on a platinized silicon substrate by the radio frequency magnetron sputtering method using a single oxide target. The microstructure and orientation of the films were adjusted by applying a thin (100) PZT seed layer by the sol-gel method and subsequent repeated sputtering. When a thin layer was deposited on the seed layer, the film had small grains with a columnar structure. However, as the film became thicker, it developed a large and non-columnar grain structure. Therefore, reducing the thickness of the film per deposition allowed the columnar microstructure to be maintained. The (100) orientation of the film was able to be maintained by depositing it on a (100) oriented seed layer. PZT thick films with controlled orientations and microstructures were successfully deposited up to a thickness of about 5 μm, and their ferroelectric and piezoelectric properties were characterized.

Dielectric and Piezoelectric Properties of PZT 52/48 Thick Films with (100) and Random Crystallorgraphic Orientation

2000 ◽  
Vol 655 ◽  
Author(s):  
Q. F. Zhou ◽  
E. Hong ◽  
R. Wolf ◽  
S. Trolier-McKinstry
Keyword(s):  
Microelectromechanical Systems ◽  
Piezoelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Active Components ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Oriented Films ◽  
Dielectric And Piezoelectric Properties

AbstractFerroelectric Pb(Zr1划xTix)O3 (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of crystallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to ∼ 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO2/Si and Pt(100)/SiO2/Si substrates, respectively. The dielectric permittivity (at 1kHz) for the (100) oriented films was 980-1000, and for the random films ∼ 930-950. In both cases, tanä was less than 0.03. The remanent polarization (∼ 30 μC/cm2) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d31(eff)) of PZT films was measured by the wafer flexure method. The d31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.

Influences of Preparation Process on the Orientation and Properties of PZT Piezoelectric Thick Film Generation Materials

2014 ◽  
Vol 924 ◽  
pp. 29-35
Author(s):  
Guo Qin Yu ◽  
Yu Ying Shao ◽  
Jun Biao Liu ◽  
Rong Ling Huo ◽  
Yan Li Li ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Thick Film ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Piezoelectric Properties ◽  
Mechanical Energy ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Electrical Energy ◽  
Preparation Process

Abstract: As it's excellent mechanical and electrical conversion characteristics, Piezoelectric material has become an important material for capturing environmental mechanical energy to get electrical energy. In this paper, (100) oriented PZT piezoelectric thick film has been prepared on Pt/Cr/SiO2/Si substrate by sol-gel used PT as transition layer. The influences of preparation process on the (100) oriented degree, ferroelectric properties, dielectric properties and piezoelectric properties of PZT piezoelectric thick film were investigated. Experiment results show that, the increasing of annealing temperature and shortening annealing time can promote PZT piezoelectric thick film growing along (100) orientation. The increasing of annealing temperature results in the decreasing of remnant polarization intensity and increasing of coercive field. Under the frequency of 1 KHz, (100) oriented PZT piezoelectric thick film with thickness of 1.5 m has the dielectric constant ˰̶̿˰́̃̅̆˼˰̈̃́˰̴̱̾˰̇̈̀˰̱̈́˰̵̷̱̱̼̹̾̾̾˰̵̹̈́̽˰̶̿˰̹̅̽̾˼˰̹́̀̽̾˰̴̱̾˰̹́̅̽̾˼˰̴̱̾˰̴̵̵̹̼̳̹̳̈́͂˰̴̹̹̱̹̓̓̀̈́̿̾˰̱̈́̾ڄ˰̹̓˰̀˾̃́£¬0.20 and 0.22, respectively. (100) orientation of PZT piezoelectric thick film can effectively improve the piezoelectric properties of PZT piezoelectric thick film, PZT piezoelectric thick film with thickness of 1.5 m and annealing time of 5min has the better (100) orientation degree, has the piezoelectric constant d33 of 102.5 pC/N. Keywords: (100) orientation; PZT generation material; ferroelectric properties; dielectric properties; piezoelectric properties

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

Sol-gel preparation and characterization of transparent GdTaO 4 : Eu3+thick films

2008 ◽  
Author(s):  
Kun Han ◽  
Mu Gu ◽  
Xiaolin Liu ◽  
Chen Ni ◽  
Shiming Huang ◽  
...  
Keyword(s):  
Thick Films ◽  
Sol Gel ◽  
Gel Preparation

Comparison between titania thick films obtained through sol–gel and hydrothermal synthetic processes

2007 ◽  
Vol 515 (23) ◽  
pp. 8339-8344 ◽  
Author(s):  
M.C. Carotta ◽  
S. Gherardi ◽  
C. Malagù ◽  
M. Nagliati ◽  
B. Vendemiati ◽  
...  
Keyword(s):  
Thick Films ◽  
Sol Gel

DEPOSITION OF PLCT THICK FILMS BY A MODIFIED SOL-GEL PROCESSING

2006 ◽  
Vol 80 (1) ◽  
pp. 253-264
Author(s):  
XIAOWU YUAN ◽  
DINGQUAN XIAO ◽  
ZHAOHUI PU ◽  
HONG LIU ◽  
JIAGANG WU ◽  
...  
Keyword(s):  
Thick Films ◽  
Sol Gel ◽  
Gel Processing

Preparation of Transparent Thick Films by Electrophoretic Sol-Gel Deposition Using Phenyltriethoxysilane-Derived Particles

2005 ◽  
Vol 81 (9) ◽  
pp. 2501-2503 ◽  
Author(s):  
Kiyofumi Katagiri ◽  
Koichi Hasegawa ◽  
Atsunori Matsuda ◽  
Masahiro Tatsumisago ◽  
Tsutomu Minami
Keyword(s):  
Thick Films ◽  
Sol Gel
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