The results of the participation of the VNIIOFI in international key comparisons of the light sensitivity of photometer heads and the spectral sensitivity of silicon light-emitting diodes

2006 ◽  
Vol 49 (1) ◽  
pp. 93-96
Author(s):  
V. I. Sapritskii ◽  
R. I. Stolyarevskaya ◽  
G. N. Tolstykh ◽  
A. V. Sharoshkin
Nanoscale ◽  
2022 ◽  
Author(s):  
Roda Nur ◽  
Takashi Tsuchiya ◽  
Kasidit Toprasertpong ◽  
Kazuya Terabe ◽  
Shinichi Takagi ◽  
...  

Monolayer MoS2 exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving...


2019 ◽  
Vol 19 (5) ◽  
pp. 1507-1514 ◽  
Author(s):  
Kumiko Oguma ◽  
Surapong Rattanakul ◽  
Mie Masaike

Abstract UV light-emitting diodes (UV-LEDs) offer various wavelength options, while microorganisms have spectral sensitivity, or so-called action spectra, which can be different among species. Accordingly, matching properly the emission spectra of UV-LEDs and the spectral sensitivity of microorganisms is a reasonable strategy to enhance inactivation. In this study, UV-LEDs with nominal peak emissions at 265, 280 and 300 nm were applied to pathogens including Legionella pneumophila, Pseudomonas aeruginosa, Vibrio parahaemolyticus and feline calicivirus, in comparison with indicator species including Escherichia coli, Bacillus subtilis spores, bacteriophage Qβ and MS2. The results indicated that, for all species tested, 265 nm UV-LED was highest in the fluence-based inactivation rate constant k, followed by 280 nm and 300 nm was much lower. The k value at 280 nm was close to that at 265 nm for feline calicivirus and MS2, suggesting that 280 nm UV-LED can be as good an option as 265 nm UV-LED to inactivate these viruses. Bacteria tended to show fluence-response curves with shoulder and tailing, while viruses followed log-linear profiles at all wavelengths tested. This study indicates the fluence-response profiles and the fluence required for a target inactivation of microorganisms, which would serve as reference data for future study and applications of UV-LEDs.


2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.


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