Research on ohmic contact characteristics of single boron nitride nanoribbon

2021 ◽  
Vol 23 (11) ◽  
Author(s):  
Xiangqian Jiang ◽  
Chuncheng Ban ◽  
Ling Li ◽  
Weiping Chen ◽  
Xiaowei Liu
Keyword(s):  
Boron Nitride ◽  
Ohmic Contact

Development of Crystallinity in Turbostratic Boron Nitride Derived from Polymeric Precursors

1991 ◽  
Vol 49 ◽  
pp. 954-955
Author(s):  
X. Qiu ◽  
A. K. Datye ◽  
T. T. Borek ◽  
R. T. Paine
Keyword(s):  
Thermal Treatment ◽  
Boron Nitride ◽  
Diffraction Pattern ◽  
Polymeric Precursors ◽  
Polymer Precursors ◽  
Diffuse Ring

Boron nitride derived from polymer precursors is of great interest for applications such as fibers, coatings and novel forms such as aerogels. The BN is prepared by the polymerization of functionalized borazine and thermal treatment in nitrogen at 1200°C. The BN powders obtained by this route are invariably trubostratic wherein the sheets of hexagonal BN are randomly oriented to yield the so-called turbostratic modification. Fib 1a and 1b show images of BN powder with the corresponding diffraction pattern in fig. 1c. The (0002) reflection from BN is seen as a diffuse ring with occational spots that come from crystals of BN such as those shown in fig. 1b. The (0002) lattice fringes of BN seen in these powders are the most characteristic indication of the crystallinity of the BN.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

Molecular insights on the dynamic stability of peptide nucleic acid functionalized carbon and boron nitride nanotubes

2021 ◽  
Vol 23 (1) ◽  
pp. 219-228
Author(s):  
Nabanita Saikia ◽  
Mohamed Taha ◽  
Ravindra Pandey
Keyword(s):  
Nucleic Acid ◽  
Boron Nitride ◽  
Nucleic Acids ◽  
Dynamic Stability ◽  
Peptide Nucleic Acid ◽  
Rational Design ◽  
Peptide Nucleic Acids ◽  
Boron Nitride Nanotubes ◽  
Molecular Hybrids ◽  
Single Wall Nanotubes

The rational design of self-assembled nanobio-molecular hybrids of peptide nucleic acids with single-wall nanotubes rely on understanding how biomolecules recognize and mediate intermolecular interactions with the nanomaterial's surface.

Enhanced Hydrolytic Stability of Porous Boron Nitride via the Control of Crystallinity, Porosity and Chemical Composition

2018 ◽  
Author(s):  
Ravi Shankar ◽  
Sofia Marchesini ◽  
Camille Petit
Keyword(s):  
Boron Nitride ◽  
Hydrolytic Stability ◽  
Chemical Properties ◽  
Spectroscopic Techniques ◽  
High Porosity ◽  
Heat Treated Sample ◽  
Heat Treated ◽  
Treated Sample ◽  
Molecular Separations ◽  
High Degree

Porous boron nitride is gaining significant attention for applications in molecular separations, photocatalysis, and drug delivery. All these areas call for a high degree of stability (or a controlled stability) over a range of chemical environments, and particularly under humid conditions. The hydrolytic stability of the various forms of boron nitride, including porous boron nitride, has been sparingly addressed in the literature. Here, we map the physical-chemical properties of the material to its hydrolytic stability for a range of conditions. Using analytical, imaging and spectroscopic techniques, we identify the links between the hydrolytic instability of porous boron nitride and its limited crystallinity, high porosity as well as the presence of oxygen atoms. To address this instability issue, we demonstrate that subjecting the material to a thermal treatment leads to the formation of crystalline domains of h-BN exhibiting a hydrophobic character. The heat-treated sample exhibits enhanced hydrolytic stability, while maintaining a high porosity. This work provides an effective and simple approach to producing stable porous boron nitride structures, and will progress the implementation of the material in applications involving interfacial phenomena.<br>

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

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