Design and simulation of InP and silicon nanowires with different channel characteristic as biosensors to improve output sensitivity

2022 ◽  
Vol 54 (2) ◽  
Author(s):  
Shahram Mohammadnejad ◽  
Iman Tahi ◽  
Mahdiyar Nouri Rezaie
Keyword(s):  
Silicon Nanowires ◽  
Channel Characteristic

scholarly journals Design and Simulation of InP and Silicon Nanowires With Different Channel Characteristic as Biosensors to Improve Output Sensitivity

2021 ◽  
Author(s):  
shahramm mohammad nejad ◽  
Iman Tahi ◽  
Mahdiyar Nouri Rezaie
Keyword(s):  
Charge Density ◽  
Silicon Nanowires ◽  
Source Region ◽  
High Sensitivity ◽  
Channel Width ◽  
Charge Densities ◽  
Channel Characteristic ◽  
Silvaco Atlas ◽  
Actual Target ◽  
P Type

Abstract This research contains a good comparison among technologies of SiNW-FET/InPNW-FET depending on the size of channel and dopants in channel for biosensing application based on the width and dopants for two types of silicon and InP materials in the nanowire channel. A device numerical modelling tool, Silvaco ATLAS is used in step one to design three p-type SiNW-FET/InPNW-FET biosensors with a channel width of 40­­­ nm, 60 nm and 70 nm for these two types of materials and in step two to design three p-type SiNW-FET/InPNW-FET biosensors with different dopants of 0.1×1014 cm-3, 1×1014 cm-3 and 10×1014 cm-3 for these two types of materials. Their sensing process is depended on the alteration in charge density that causes changing in the electric field at the surface of the SiNW-FET/InPNW-FET. The resistivity of the device is changed when a negatively charged biomolecules species has a chemical reaction with the external surface of a P-type SiNW-FET/InPNW-FET. To investigate the effect of different channel width and dopants on the performance of the SiNW-FET/InPNW-FET biosensor, several negatively interface charge densities, QF (-0.1×1012 cm-2, -0.5×1012 cm-2, and -1×1012 cm-2) are introduced on the surface of the SiNW-FET/InPNW-FET channel to represent as the actual target analytics (DNA) captured by the bioreceptor of the biosensor. Based on the results, these negatively QF attract the hole carriers below the surface of p-type nanowire causes to collect carriers in the channel, and make an increase in the device output ID. Increase of the applied negative charge density has allowed for more ID to flow across the channel between drain and source region. The changes of ID with the applied QF are utilized to determine the sensitivities for all designed biosensor with different channel width and channel dopants. The minimum nanowire width of 40 nm with the minimum nanowire dopants of 0.1×1014 cm-3 for the high sensitivity silicon state of 3.6 μA/cm-2 compared to the indium phosphide state of 2.8 μA/cm-2. So the best performance for detecting the desired analyte in the silicon state with the lowest width and dopant to be seen.

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

HEAT TRANSFER ANALYSIS OF THIN & ROUGH SILICON NANOWIRES

2011 ◽  
Author(s):  
Changhyuk Lee ◽  
Jae Sik Jin ◽  
Joon Sik Lee
Keyword(s):  
Heat Transfer ◽  
Silicon Nanowires ◽  
Heat Transfer Analysis

The effects of substrate self-biasing on the growth of Sn-catalysed silicon nanowires grown at low pressure

2013 ◽  
Vol 49 (5) ◽  
pp. 2078-2084 ◽  
Author(s):  
J. Ball ◽  
B. G. Mendis ◽  
H. S. Reehal
Keyword(s):  
Silicon Nanowires ◽  
Low Pressure

Phonon spectrum and specific heat of silicon nanowires

2007 ◽  
Vol 102 (10) ◽  
pp. 104303 ◽  
Author(s):  
Y. Zhang ◽  
J. X. Cao ◽  
Y. Xiao ◽  
X. H. Yan
Keyword(s):  
Specific Heat ◽  
Silicon Nanowires ◽  
Phonon Spectrum

Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time

Silicon ◽  
2021 ◽  
Author(s):  
Ahlem Rouis ◽  
Neila Hizem ◽  
Mohamed Hassen ◽  
Adel Kalboussi
Keyword(s):  
Electrical Properties ◽  
Silicon Nanowires ◽  
Schottky Barriers ◽  
Etching Time

Cyclic Voltammetric biosensing of cellular ionic secretion based on silicon nanowires to detect the effect of paclitaxel on breast Normal and Cancer cells

2021 ◽  
pp. 111512
Author(s):  
Hani Shashaani ◽  
Navid Akbari ◽  
Mahsa Faramarzpour ◽  
Mohammad Salemizadeh Parizi ◽  
Shohreh Vanaei ◽  
...  
Keyword(s):  
Cancer Cells ◽  
Silicon Nanowires ◽  
Cyclic Voltammetric

scholarly journals Replacing Metals with Oxides in Metal-Assisted Chemical Etching Enables Direct Fabrication of Silicon Nanowires by Solution Processing

Nano Letters ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 2310-2317
Author(s):  
Maxime Gayrard ◽  
Justine Voronkoff ◽  
Cédric Boissière ◽  
David Montero ◽  
Laurence Rozes ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Solution Processing ◽  
Direct Fabrication ◽  
Metal Assisted Chemical Etching
Sign in / Sign up

Export Citation Format

Share Document