scholarly journals RHBD Techniques to Mitigate SEU and SET in CMOS Frequency Synthesizers

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 690 ◽  
Author(s):  
V. Díez-Acereda ◽  
Sunil L. Khemchandani ◽  
J. del Pino ◽  
S. Mateos-Angulo
Keyword(s):  
Radiation Effects ◽  
Frequency Synthesizer ◽  
Cmos Technology ◽  
High Energy ◽  
Frequency Synthesizers ◽  
High Energy Particle ◽  
Single Event ◽  
Single Event Transient ◽  
Effects Of Radiation ◽  
Radiation Hardening By Design

This paper presents a thorough study of radiation effects on a frequency synthesizer designed in a 0.18 μ m CMOS technology. In CMOS devices, the effect of a high energy particle impact can be modeled by a current pulse connected to the drain of the transistors. The effects of SET (single event transient) and SEU (single event upset) were analyzed connecting current pulses to the drains of all the transistors and analyzing the amplitude variations and phase shifts obtained at the output nodes. Following this procedure, the most sensitive circuits were detected. This paper proposes a combination of radiation hardening-by-design techniques (RHBD) such as resistor–capacitor (RC) filtering or local circuit-redundancy to mitigate the effects of radiation. The proposed modifications make the frequency synthesizer more robust against radiation.

scholarly journals Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications

2019 ◽  
Vol 9 (3) ◽  
pp. 21 ◽  
Author(s):  
Satheesh Kumar S ◽  
Kumaravel S
Keyword(s):  
Low Power ◽  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Energy ◽  
Oxide Semiconductor ◽  
High Energy Particle ◽  
Single Event Upset ◽  
Single Event ◽  
Clock Gating

Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation. In this paper, a low-power and high-speed single event upset radiation hardened latch is proposed. The proposed latch can withstand single event upsets completely when the high energy particle hit on any one of its intermediate nodes. The proposed latch structure comprises of four CMOS feedback schemes and a Muller C-element with clock gating technique. For the sake of comparison, the proposed and the existing latches in the literature are implemented in 45nm CMOS technology. From the post layout simulation results, it may be noted that the proposed latch achieves 8% low power consumption, 95% less delay, and a 94% reduction in power-delay-product compared to the existing single event upset resilient and single event tolerant latches. Monte Carlo simulations show that the proposed latch is less sensitive to process, voltage, and temperature variations in comparison with the existing hardened latches in the literature.

High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

2017 ◽  
Vol 60 (12) ◽  
Author(s):  
Jiaqi Liu ◽  
Yuanfu Zhao ◽  
Liang Wang ◽  
Dan Wang ◽  
Hongchao Zheng ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Heavy Ion ◽  
High Energy ◽  
Single Event ◽  
Single Event Transient ◽  
High Energy Proton ◽  
Energy Proton

Single-Event Transient Case Study for System-Level Radiation Effects Analysis

2021 ◽  
pp. 1-1
Author(s):  
Michael J. Campola ◽  
Rebekah A. Austin ◽  
Edward P. Wilcox ◽  
Hak S. Kim ◽  
Raymond L. Ladbury ◽  
...  
Keyword(s):  
Radiation Effects ◽  
System Level ◽  
Single Event ◽  
Single Event Transient ◽  
Transient Case

Research on the effect of single-event transient of an on-chip linear voltage regulator fabricated on 130 nm commercial CMOS technology

2017 ◽  
Vol 73 ◽  
pp. 116-121 ◽  
Author(s):  
QiFeng Zhao ◽  
GuoQing Yang ◽  
YongJie Sun ◽  
PeiFu Yu ◽  
JianJun Chen ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Voltage Regulator ◽  
Single Event ◽  
Single Event Transient ◽  
On Chip ◽  
Linear Voltage

Research on single event transient pulse quenching effect in 90 nm CMOS technology

2011 ◽  
Vol 54 (11) ◽  
pp. 3064-3069 ◽  
Author(s):  
JunRui Qin ◽  
ShuMing Chen ◽  
BiWei Liu ◽  
JianJun Chen ◽  
Bin Liang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient ◽  
Quenching Effect

scholarly journals SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1531 ◽  
Author(s):  
Chang Cai ◽  
Shuai Gao ◽  
Peixiong Zhao ◽  
Jian Yu ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Radiation Effects ◽  
Large Scale ◽  
Random Access ◽  
Radiation Sensitivity ◽  
Heavy Ion ◽  
High Energy ◽  
Radiation Environment ◽  
Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

scholarly journals Long-Term Sex- and Genotype-Specific Effects of 56Fe Irradiation on Wild-Type and APPswe/PS1dE9 Transgenic Mice

2021 ◽  
Vol 22 (24) ◽  
pp. 13305
Author(s):  
Maren K. Schroeder ◽  
Bin Liu ◽  
Robert G. Hinshaw ◽  
Mi-Ae Park ◽  
Shuyan Wang ◽  
...  
Keyword(s):  
Transgenic Mice ◽  
Radiation Effects ◽  
Motor Coordination ◽  
Space Radiation ◽  
High Energy ◽  
High Energy Particle ◽  
Wild Type ◽  
Particle Radiation ◽  
Specific Effects

Space radiation presents a substantial threat to travel beyond Earth. Relatively low doses of high-energy particle radiation cause physiological and behavioral impairments in rodents and may pose risks to human spaceflight. There is evidence that 56Fe irradiation, a significant component of space radiation, may be more harmful to males than to females and worsen Alzheimer’s disease pathology in genetically vulnerable models. Yet, research on the long-term, sex- and genotype-specific effects of 56Fe irradiation is lacking. Here, we irradiated 4-month-old male and female, wild-type and Alzheimer’s-like APP/PS1 mice with 0, 0.10, or 0.50 Gy of 56Fe ions (1GeV/u). Mice underwent microPET scans before and 7.5 months after irradiation, a battery of behavioral tests at 11 months of age and were sacrificed for pathological and biochemical analyses at 12 months of age. 56Fe irradiation worsened amyloid-beta (Aβ) pathology, gliosis, neuroinflammation and spatial memory, but improved motor coordination, in male transgenic mice and worsened fear memory in wild-type males. Although sham-irradiated female APP/PS1 mice had more cerebral Aβ and gliosis than sham-irradiated male transgenics, female mice of both genotypes were relatively spared from radiation effects 8 months later. These results provide evidence for sex-specific, long-term CNS effects of space radiation.

The influences of radiation effects on DC/RF performances of Lg=22 nm gate-all-around nanosheet field-effect transistor

2022 ◽  
Author(s):  
Yue Ma ◽  
Jinshun Bi ◽  
Sandip Majumdar ◽  
Safdar Mehmood ◽  
Lanlong Ji ◽  
...  
Keyword(s):  
Field Effect ◽  
Radiation Effects ◽  
Field Effect Transistor ◽  
Vertical Direction ◽  
High Energy ◽  
High Energy Particle ◽  
Lateral Direction ◽  
Effect Transistor ◽  
Rf Performances ◽  
Tcad Simulations

Abstract In this paper, we carried out detailed TCAD simulations to investigate the radiation effects, e.g., total ionizing dose (TID) and single-event effects (SEEs), on direct current (DC) and radio frequency (RF) characteristics of the gate-all-around (GAA) nanosheet field-effect transistor (FET). The simulation model used is composed of 7-layer stacked GAA nanosheet FET with Lg=22 nm, which was implemented in this study. The open current and the drain-induced barrier lowering of the device are ~ 3mA/μm and 47mV/V, respectively. The results indicate that the TID have little influence on the DC and RF characteristics when the transistor is working in an open state. During the SEEs simulation, we considered three incident directions for the high energy particle, including the lateral direction of the channels, the vertical direction of the channels and the top of the channels. The influence of the particle injecting along the lateral and vertical directions of the channels shows stronger relation with the distance from the incident point compared to the influence of the particle from the top. Besides, the general influence of the particle injecting along the lateral directions of the channels is higher than the other two directions. The total injected charge of the particle injecting along the lateral direction, along the vertical direction and from the top are 3 fC, 1.4 fC and 2.1 fC, respectively. As compared to the FinFET, the GAA nanosheet has superior RF performances and less sensitivity to TID effect. This work can provide a guideline for the GAA nanosheet devices in aerospace and avionic RF applications.

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