A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET

2008 ◽  
Vol 52 (8) ◽  
pp. 1249-1255 ◽  
Author(s):  
Chung Ha Suh
Keyword(s):  
Analytical Model ◽  
Simple Analytical Model ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Threshold Voltages

Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control

2017 ◽  
Vol 9 (01) ◽  
pp. 67-72
Author(s):  
Sarvesh Dubey ◽  
Rahul Mishra
Keyword(s):  
Analytical Modeling ◽  
Threshold Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Simulation Data ◽  
Back Gate ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Channel Effects ◽  
Gate Control

The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

scholarly journals The Influence of Back Gate Bias on the OCTO SOI MOSFET’s Response to X-ray Radiation

2015 ◽  
Vol 10 (1) ◽  
pp. 43-48
Author(s):  
Leonardo N. de S. Fino ◽  
Marcilei A. Guazzelli ◽  
Christian Renaux ◽  
Denis Flandre ◽  
Salvador P. Gimenez
Keyword(s):  
Comparative Analysis ◽  
Gate Bias ◽  
Electrical Behavior ◽  
Total Ionizing Dose ◽  
Back Gate ◽  
Soi Mosfet ◽  
X Ray ◽  
Buried Oxide ◽  
Threshold Voltages ◽  
The One

This work investigates the X-ray irradiation impact on the performance of an on-conventional transistor called OCTO SOI MOSFET that adopts an octagonal gate shape instead of a rectangular. The electrical behaviors of both devices were studied through an experimental comparative analysis of the total ionizing dose influence. In addition, the back-gate bias technique was applied in these devices to reestablish its threshold voltages and drain currents conditions that were degraded due the trapping of positive charges in the buried oxide. As the main finding of this work, after the irradiation procedure, we notice that the OCTO device is capable to reestablish its pre-rad electrical behavior with a smaller back gate bias than the one observed in the standard one counterpart. This is mainly because the parasitic transistors in the bird’s beak region are practically deactivated due the particular octagonal gate geometry.

scholarly journals Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation

2017 ◽  
Vol 12 (2) ◽  
pp. 101-106
Author(s):  
V. T. Itocazu ◽  
K. R. A. Sasaki ◽  
V. Sonnenberg ◽  
J. A. Martino ◽  
E. Simoen ◽  
...  
Keyword(s):  
Experimental Data ◽  
Analytical Model ◽  
Threshold Voltage ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Silicon On Insulator ◽  
Dynamic Threshold ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Good Agreement

This paper presents an analytical model to determine the threshold voltage in Ultrathin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FD SOI) MOSFETs operating in dynamic threshold (DT) voltage modes. The analytical model is based on implementing the quantum confinement effect and the DT restriction. The results show that the proposed analytical model in its simplicity provides a good agreement to the experimental data.

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

Convective Losses From Cavity Solar Receivers—Comparisons Between Analytical Predictions and Experimental Results

1983 ◽  
Vol 105 (1) ◽  
pp. 29-33 ◽  
Author(s):  
A. M. Clausing
Keyword(s):  
Experimental Data ◽  
Experimental Evidence ◽  
Analytical Model ◽  
Excellent Agreement ◽  
Experimental Results ◽  
Simple Analytical Model ◽  
Refined Model ◽  
Wall Area

Cavity solar receivers are generally believed to have higher thermal efficiencies than external receivers due to reduced losses. A simple analytical model was presented by the author which indicated that the ability to heat the air inside the cavity often controls the convective loss from cavity receivers. Thus, if the receiver contains a large amount of inactive hot wall area, it can experience a large convective loss. Excellent experimental data from a variety of cavity configurations and orientations have recently become available. These data provided a means of testing and refining the analytical model. In this manuscript, a brief description of the refined model is presented. Emphasis is placed on using available experimental evidence to substantiate the hypothesized mechanisms and assumptions. Detailed comparisons are given between analytical predictions and experimental results. Excellent agreement is obtained, and the important mechanisms are more clearly delineated.

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