Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

2018 ◽  
Vol 47 (8) ◽  
pp. 4345-4350 ◽  
Author(s):  
Y. Kashiwaba ◽  
Y. Tanaka ◽  
M. Sakuma ◽  
T. Abe ◽  
Y. Imai ◽  
...  
2013 ◽  
Vol 1494 ◽  
pp. 91-97
Author(s):  
Tien-Chai Lin ◽  
Wen-Chang Huang ◽  
Chin-Hung Liu ◽  
Shang-Chou Chang

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.


1997 ◽  
Vol 474 ◽  
Author(s):  
Hee-Bog Kang ◽  
Kiyoshi Nakamura ◽  
Kazuo Ishikawa

ABSTRACTEpitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.


2020 ◽  
Vol 59 (SI) ◽  
pp. SIIG11
Author(s):  
Yudai Yasuhara ◽  
Kazunori Kurishima ◽  
Toyohiro Chikyow ◽  
Atsushi Ogura ◽  
Takahiro Nagata

1974 ◽  
Vol 24 (10) ◽  
pp. 490-492 ◽  
Author(s):  
S. Takada ◽  
M. Ohnishi ◽  
H. Hayakawa ◽  
N. Mikoshiba

2013 ◽  
Vol 1494 ◽  
pp. 19-24 ◽  
Author(s):  
Takuya Matsuo ◽  
Shuhei Okuda ◽  
Katsuyoshi Washio

ABSTRACTTo apply thin ZnO film to photoacoustic tomography sensors, we investigated methods to improve its piezoelectricity with high optical transmittance. ZnO film was deposited by RF magnetron sputtering on a quartz substrate with various changes of the following conditions: RF sputtering power, Ar gas pressure, and substrate temperature (TSUB). The preliminary optimization of sputtering conditions is to form the ZnO film with good c-axis crystalline alignment. The results of X-ray diffraction measurement and cross-sectional observations indicated that the high-TSUB condition was preferable. This was because the desorption of Zn due to high-TSUB during the deposition process induced the formation of excellent columnar grains normal to the substrate. To enhance the piezoresponse, the substitution of Zn with different crystal-radius atoms was investigated, the aim being to increase the electrically neutral dipole moment by the partial displacement of the Zn-O bond. The transition metal V, with the potential to have the various configurations and coordination numbers, was selected as the dopant. As a result, it was confirmed that the diffraction peak from the (002) plane shifted to low angles with small degradation of the diffraction intensities.


Author(s):  
A. A.M. Idris ◽  
R. Arsat ◽  
M. K. Ahmad ◽  
F. Sidek

This paper reports the effect of the different deposition methods towards the ZnO nanostructure crystal quality and film thickness on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique, sol-gel and RF Sputtering. Different methods give a different nanostructure of the ZnO thin film. Sol gel methods, results of nanoflowers ZnO thin film with the thickness of thin film is 600nm. It also produces the best of the piezoelectric effect in term of electrical performance, which is 5.0 V and 12 MHz of frequency which is higher than other frequency obtained by spray pyrolysis and RF sputtering.


2007 ◽  
Vol 1052 ◽  
Author(s):  
Sudhir Chandra ◽  
Ravindra Singh

AbstractIn the present work, we report a new fabrication process to integrate the “c-axis oriented” ZnO films with bulk-micromachined silicon diaphragms. ZnO films are very sensitive to the chemicals used in the micro-electro-mechanical systems (MEMS) fabrication process which include acids, bases and etchants of different material layers (e.g. SiO2, chromium, gold etc.). A Si3N4 layer is incorporated to protect the ZnO film from the etchants of chromium and gold used for patterning the electrodes. A mechanical jig is used for protecting the front side (ZnO film side) of the wafer from ethylenediamine pyrocatechol water (EPW) during the anisotropic etching of silicon. The resistivity measurement performed on the ZnO film integrated with micro-diaphragm shows the reliability of the fabrication process proposed in this work.


1977 ◽  
Vol 16 (9) ◽  
pp. 1707-1708 ◽  
Author(s):  
Yasuyuki Higuma ◽  
Katsuhiko Tanaka ◽  
Taichi Nakagawa ◽  
Tetsuya Kariya ◽  
Yoshihiro Hamakawa

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