Growth and Characterization of ZnO Thin Film by RF Magnetron Sputtering for Photoacoustic Tomography Sensor

2013 ◽  
Vol 1494 ◽  
pp. 19-24 ◽  
Author(s):  
Takuya Matsuo ◽  
Shuhei Okuda ◽  
Katsuyoshi Washio
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Substrate ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Photoacoustic Tomography ◽  
Diffraction Measurement ◽  
Zno Film ◽  
Cross Sectional

ABSTRACTTo apply thin ZnO film to photoacoustic tomography sensors, we investigated methods to improve its piezoelectricity with high optical transmittance. ZnO film was deposited by RF magnetron sputtering on a quartz substrate with various changes of the following conditions: RF sputtering power, Ar gas pressure, and substrate temperature (TSUB). The preliminary optimization of sputtering conditions is to form the ZnO film with good c-axis crystalline alignment. The results of X-ray diffraction measurement and cross-sectional observations indicated that the high-TSUB condition was preferable. This was because the desorption of Zn due to high-TSUB during the deposition process induced the formation of excellent columnar grains normal to the substrate. To enhance the piezoresponse, the substitution of Zn with different crystal-radius atoms was investigated, the aim being to increase the electrically neutral dipole moment by the partial displacement of the Zn-O bond. The transition metal V, with the potential to have the various configurations and coordination numbers, was selected as the dopant. As a result, it was confirmed that the diffraction peak from the (002) plane shifted to low angles with small degradation of the diffraction intensities.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING

2015 ◽  
Vol 75 (7) ◽  
Author(s):  
Farah Lyana Shain ◽  
Azmizam Manie @ Mani ◽  
Lam Mui Li ◽  
Saafie Salleh ◽  
Afishah Alias ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Characteristic ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Rf Power ◽  
Argon Flow ◽  
Sputtering Power

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %. 

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thin Layer ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Substrate Roughness ◽  
Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

scholarly journals Effect of Cr Atom Plasma Emission Intensity on the Characteristics of Cr-DLC Films Deposited by Pulsed-DC Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 608
Author(s):  
Guang Li ◽  
Yi Xu ◽  
Yuan Xia
Keyword(s):  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Gas Flow ◽  
Optical Emission ◽  
Scratch Test ◽  
Deposition Process ◽  
Plasma Emission ◽  
Cross Sectional ◽  
Pulsed Dc ◽  
Plasma Emission Intensity

A pulsed-dc (direct current) magnetron sputtering with a plasma emission monitor (PEM) system was applied to synthesize Cr-containing hydrogenated amorphous diamond-like carbon (Cr-DLC) films using a large-size industrial Cr target. The plasma emission intensity of a Cr atom at 358 nm wavelength was characterized by optical emission spectrometer (OES). C2H2 gas flow rate was precisely adjusted to obtain a stable plasma emission intensity. The relationships between Cr atom plasma emission intensity and the element concentration, cross-sectional morphology, deposition rate, microstructure, mechanical properties, and tribological properties of Cr-DLC films were investigated. Scanning electron microscope and Raman spectra were employed to analyze the chemical composition and microstructure, respectively. The mechanical and tribological behaviors were characterized and analyzed by using the nano-indentation, scratch test instrument, and ball-on-disk reciprocating friction/wear tester. The results indicate that the PEM system was successfully used in magnetron sputtering for a more stable Cr-DLC deposition process.

scholarly journals Structural, Optical, and Electrochromic Properties of Pure and Mo-Doped WO3 Films by RF Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Vempuluri Madhavi ◽  
Paruchuri Kondaiah ◽  
Obili Mahammad Hussain ◽  
Suda Uthanna
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Orthorhombic Phase ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Optical Modulation ◽  
Coated Glass Substrate ◽  
Electrochromic Properties ◽  
Cyclic Voltametry ◽  
Near Ir

Pure and Mo-doped WO3 films were formed on ITO-coated glass substrate held at 473 K by RF magnetron sputtering technique. The structural, morphological, and optical properties of pure and Mo-doped WO3 thin films have been systematically studied. The structural properties revealed that the pure WO3 films exhibited a (020) reflection related to the orthorhombic phase of WO3, whereas Mo-doped films showed (200) reflection. The surface morphology revealed that pure WO3 films showed the dense surface and Mo-doped films contained agglomerated grains which were uniformly distributed on the surface of the substrate. The optical transmittance decreased from 85% to 75% for pure and Mo-doped WO3 films, respectively. The electrochromic properties of the films were measured by cyclic voltametry in 1 M Li2SO4 electrolyte solution. The optical modulation of pure WO3 films at near IR was 50%, and the calculated color efficiency was 33.8 cm2/C, while in Mo-doped WO3 the efficiency improved to 42.5 cm2/C.

Effect of Sputtering Pressure on Optimization of Titanium Dioxide Nanostructures Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 667 ◽  
pp. 452-457 ◽  
Author(s):  
N.A.M. Asib ◽  
Mohamed Zahidi Musa ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Surface Roughness ◽  
Titanium Dioxide ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Transmission Spectra ◽  
Cross Sectional ◽  
Vis Spectroscopy ◽  
Sputtering Pressure ◽  
Tio2 Nanostructures

Titanium dioxide (TiO2) nanostructures were deposited on glass substrate by Radio Frequency (RF) magnetron sputtering. The samples deposited at various sputtering pressures and annealed at 723 K, were characterized using Atomic Force Microscope (AFM) to observe the surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures, Field Emission Scanning Electrons Microscope (FESEM) to observe the particle sizes of TiO2 nanostructures and UV-vis spectroscopy to record the UV-vis transmission spectra. The aim of this paper is to determine which parameter of sputtering pressures influence the optimization of TiO2 nanostructures. AFM images show that the surface roughness of the samples decreases as the working pressures of sputtering increases. From FESEM images, it can be deduced that the higher the sputtering pressure, the smaller the particle size is. All the samples are highly transmittance with an average transmittance higher than 80% in the visible region as recorded by UV-vis transmission spectra. The relatively high transmittance of the sample indicates its low surface roughness and good homogeneity. For optimum TiO2 nanostructures deposited at various RF pressures it has the lowest surface roughness and the smallest TiO2 size particles with the indirect optical band gap of 3.41 eV.

SEPARATED CuInSe2 QUANTUM DOTS ON ZnO THIN FILM BY ICP-ASSISTED MAGNETRON SPUTTERING

2007 ◽  
Vol 14 (02) ◽  
pp. 225-228 ◽  
Author(s):  
S. Y. HUANG ◽  
S. XU ◽  
J. D. LONG ◽  
Q. J. CHENG ◽  
X. B. XU ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Magnetron Sputtering ◽  
Low Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Lateral Size ◽  
Zno Film ◽  
X Ray ◽  
Deposition Parameters ◽  
Compound Target

Uniformly hemispherical separated CuInSe 2 (CIS) quantum dots (QDs) were fabricated by low-frequency inductivity coupled plasma (LF-ICP) assisted radio-frequency (RF) magnetron sputtering technique from a ternary compound target on Si (100) and glass substrate with ZnO film serving as buffer layer. The average lateral size and densities of the QDs could be controlled by appropriate deposition parameters. The distribution scope of diameters was from 40 to 120 nm, density was from 4.5E9 to 2.1E11/cm2. Field-emission scanning electron microscope (FE-SEM) and energy-dispersive X-ray (EDX) spectrometer were adopted to measure the properties of CIS QDs.

Effect of Sputtering Power on Morphological, Structural and Optical Properties of Al-Doped Zinc Oxide Film

2015 ◽  
Vol 659 ◽  
pp. 593-598
Author(s):  
Patthamapun Boonprakom ◽  
Watcharee Rattanasakulthong
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Rf Sputtering ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Zinc Oxide Film ◽  
Sputtering Power ◽  
Visible Wavelength Range ◽  
Deposited Films

Transparent conductive Al-doped zinc oxide (ZnO:Al) films with different sputtering power were prepared on glass substrate using an RF sputtering technique. Two main peaks of the hexagonal wurtzite structure in the (002) and (004) direction were observed in every deposited ZnO:Al film. Intensities of these peaks were increased with the increasing sputtering power. Moreover, the surface roughness tended to increase with increasing sputtering power whereas the electrical resistance decreased with increasing sputtering power. The ZnO:Al film deposited at 150 and 200 W showed maximum optical transmittance of over 80% in the visible wavelength range. All results confirmed that the sputtering power directly affected film thickness because the higher sputtering power gave rise to a higher deposition rate; the surface morphology of the deposited films was dependent on the sputtering power and the optical properties were indirectly affected by the power of the deposition process.

The Photoelectric and Photocatalytic Property Study of Cu2S/ZnO Films

2012 ◽  
Vol 271-272 ◽  
pp. 301-304
Author(s):  
Feng Xu ◽  
Sheng Nan Sun ◽  
Yi Xin Wang ◽  
Jia Jia Cao ◽  
Zi Han Wang ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Methyl Orange ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Photocatalytic Property ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film

ZnO film and Cu2S/ZnO bilays on the glass substrate were fabricated by RF magnetron sputtering. We carried out the experiments by adjusting the thickness of Cu2S on ZnO layer. The performance of Cu2S/ZnO on the transparency, conduction and photocatalysis were investigated. The photocatalytic experiments showed a good photocatalytic activity for photodegradation of methyl orange.

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