Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

2016 ◽  
Vol 25 (11) ◽  
pp. 117305 ◽  
Author(s):  
Yun-Long He ◽  
Chong Wang ◽  
Min-Han Mi ◽  
Xue-Feng Zheng ◽  
Meng Zhang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Electron Mobility ◽  
Oxygen Plasma ◽  
High Electron Mobility Transistors ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Recessed Gate

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

2015 ◽  
Vol 8 (11) ◽  
pp. 111001 ◽  
Author(s):  
Joel T. Asubar ◽  
Yoshiki Sakaida ◽  
Satoshi Yoshida ◽  
Zenji Yatabe ◽  
Hirokuni Tokuda ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Electron Mobility ◽  
Oxygen Plasma ◽  
High Electron Mobility Transistors ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

2004 ◽  
Vol 43 (4B) ◽  
pp. 2255-2258 ◽  
Author(s):  
Akira Endoh ◽  
Yoshimi Yamashita ◽  
Keiji Ikeda ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Rf Performance ◽  
Recessed Gate

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

2013 ◽  
Vol 547 ◽  
pp. 106-110 ◽  
Author(s):  
Jong-Won Lim ◽  
Ho-Kyun Ahn ◽  
Seong-il Kim ◽  
Dong-Min Kang ◽  
Jong-Min Lee ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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