Chemical–Mechanical Polishing of Cemented Carbide Insert Surface for Extended Tool Life in Turning of GH4169 Nickel-Based Superalloy

2020 ◽  
Vol 21 (8) ◽  
pp. 1421-1435
Author(s):  
Zihua Hu ◽  
Changjiang Qin ◽  
Xiaogao Chen ◽  
Aimin Tang ◽  
Tao Fang ◽  
...  
Keyword(s):  
Tool Life ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Cemented Carbide ◽  
Nickel Based Superalloy ◽  
Carbide Insert

Experimental Study on Turning Nickel-Based Superalloy GH4033 with Coated Cemented Carbide Tools

2014 ◽  
Vol 800-801 ◽  
pp. 191-196
Author(s):  
Bin Zhao ◽  
Han Lian Liu ◽  
Chuan Zhen Huang ◽  
Bin Zou ◽  
Hong Tao Zhu
Keyword(s):  
Surface Roughness ◽  
Tool Life ◽  
Failure Modes ◽  
Flank Wear ◽  
Cutting Performance ◽  
Cemented Carbide ◽  
Nickel Based Superalloy ◽  
Coated Tool ◽  
Optimal Cutting Parameters ◽  
Coated Cemented Carbide

The nickel-based superalloy GH4033 is one of the difficult-to-cut materials. In order to investigate the machinability of GH4033, the tool cutting performance, tool failure modes, tool life and the relationships between surface roughness and tool flank wear were studied by using different coated cemented carbide cutting tools under dry cutting. Aiming at the amount of metal removal combining with the tool life and surface quality, the better cutting tool coating type and optimal cutting parameters were obtained through the orthogonal experiments. The results showed that the cutting performance of TiCN coated tool (GC4235) was better than that of TiAlN coated tool (JC450V). With these two kinds of tools, the machined surface roughness decreased to a minimum value and then increased with the increase of flank wear. When cutting GH4033, the main wear mechanism for both of the two types of tools included adhesive wear, diffusive wear, abrasive wear, edge wear and coating peeling.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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