Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

Silicon ◽  
2021 ◽  
Author(s):  
Bhavya Kumar ◽  
Rishu Chaujar
Keyword(s):  
Performance Evaluation ◽  
Gate Stack ◽  
Accumulation Mode ◽  
Rf Performance

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Silicon ◽  
2021 ◽  
Author(s):  
Suddapalli Subba Rao ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
D. Srikar ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Double Gate ◽  
Gate Stack ◽  
Fixed Charges ◽  
Rf Performance

Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance

2016 ◽  
Vol 94 ◽  
pp. 60-73 ◽  
Author(s):  
Atanu Kundu ◽  
Arpan Dasgupta ◽  
Rahul Das ◽  
Shramana Chakraborty ◽  
Arka Dutta ◽  
...  
Keyword(s):  
Analytical Study ◽  
Gate Stack ◽  
Dg Mosfet ◽  
Rf Performance

Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs

2018 ◽  
Vol 24 (5) ◽  
pp. 2317-2324 ◽  
Author(s):  
Kalyan Biswas ◽  
Angsuman Sarkar ◽  
Chandan Kumar Sarkar
Keyword(s):  
Accumulation Mode ◽  
Shape Influence ◽  
Rf Performance ◽  
Fin Shape
Sign in / Sign up

Export Citation Format

Share Document