Research on Temperature Zero Drift of SiC Piezoresistive Pressure Sensor Based on Asymmetric Wheatstone Bridge

Silicon ◽  
2021 ◽  
Author(s):  
Baohua Tian ◽  
Haiping Shang ◽  
Weibing Wang
Keyword(s):  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Zero Drift ◽  
Temperature Zero ◽  
Piezoresistive Pressure Sensor

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

The Electricity Design of Pressure Sensor

2013 ◽  
Vol 438-439 ◽  
pp. 539-542
Author(s):  
Tao Li ◽  
Guo Jing Ren ◽  
Li Feng Qi ◽  
Zhi Min Liu
Keyword(s):  
Mechanical System ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Micro Electro Mechanical System ◽  
Open Loop ◽  
Bridge Design ◽  
Piezoresistive Pressure Sensor ◽  
Working Principle

The relative discussion and research of Micro-Electro-Mechanical System (MEMS) and pressure sensor is carried out in this paper. The working principle of pressure sensor is analyzed, and the cantilever piezoresistive pressure sensor is studied in details. The electricity design of pressure sensor is researched. The open loop Wheatstone-bridge design is adopted in this paper, which adds the freedom of disposing circuit.

Design and Fabrication of an Improved MEMS-Based Piezoresistive Pressure Sensor

2012 ◽  
Vol 482-484 ◽  
pp. 318-321 ◽  
Author(s):  
Zi Jun Song ◽  
Xiang Wang ◽  
Yan Li ◽  
Hai Sheng San ◽  
Yu Xi Yu
Keyword(s):  
Pressure Sensor ◽  
Bridge Circuit ◽  
Wheatstone Bridge ◽  
Lower Surface ◽  
Harsh Environment ◽  
Test Results ◽  
Ansys Software ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Pressure Cavity

An improved piezoresistive pressure sensor is designed for harsh environment application. The highlight of this design is that the Wheatstone bridge circuit is put in lower surface of pressure diaphragm and sealed in the vacuum pressure cavity. The bridge circuit is led out by embedded Al electrodes on bonding surface. ANSYS software has been used to analyze the stress distribution of the diaphragm. By using the MEMS technology, the pressure sensor with the dimension of 1.5mm×1.5mm×500µm is fabricated. The performance of piezoresistive pressure sensor, including output, sensitivity, and nonlinearity, are investigated. The test results show that sensitivity is 20mV/V-MPa and maximum nonlinearity is 2.73%, which meet the requirements for the modern industry.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

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