Design and Fabrication of an Improved MEMS-Based Piezoresistive Pressure Sensor

2012 ◽  
Vol 482-484 ◽  
pp. 318-321 ◽  
Author(s):  
Zi Jun Song ◽  
Xiang Wang ◽  
Yan Li ◽  
Hai Sheng San ◽  
Yu Xi Yu
Keyword(s):  
Pressure Sensor ◽  
Bridge Circuit ◽  
Wheatstone Bridge ◽  
Lower Surface ◽  
Harsh Environment ◽  
Test Results ◽  
Ansys Software ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Pressure Cavity

An improved piezoresistive pressure sensor is designed for harsh environment application. The highlight of this design is that the Wheatstone bridge circuit is put in lower surface of pressure diaphragm and sealed in the vacuum pressure cavity. The bridge circuit is led out by embedded Al electrodes on bonding surface. ANSYS software has been used to analyze the stress distribution of the diaphragm. By using the MEMS technology, the pressure sensor with the dimension of 1.5mm×1.5mm×500µm is fabricated. The performance of piezoresistive pressure sensor, including output, sensitivity, and nonlinearity, are investigated. The test results show that sensitivity is 20mV/V-MPa and maximum nonlinearity is 2.73%, which meet the requirements for the modern industry.

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

The Electricity Design of Pressure Sensor

2013 ◽  
Vol 438-439 ◽  
pp. 539-542
Author(s):  
Tao Li ◽  
Guo Jing Ren ◽  
Li Feng Qi ◽  
Zhi Min Liu
Keyword(s):  
Mechanical System ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Micro Electro Mechanical System ◽  
Open Loop ◽  
Bridge Design ◽  
Piezoresistive Pressure Sensor ◽  
Working Principle

The relative discussion and research of Micro-Electro-Mechanical System (MEMS) and pressure sensor is carried out in this paper. The working principle of pressure sensor is analyzed, and the cantilever piezoresistive pressure sensor is studied in details. The electricity design of pressure sensor is researched. The open loop Wheatstone-bridge design is adopted in this paper, which adds the freedom of disposing circuit.

Sensitivity Optimization of MEMS Based Piezoresistive Pressure Sensor for Harsh Environment

Silicon ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2663-2671 ◽  
Author(s):  
Priyanshu Verma ◽  
Deepak Punetha ◽  
Saurabh Kumar Pandey
Keyword(s):  
Pressure Sensor ◽  
Harsh Environment ◽  
Piezoresistive Pressure Sensor

Characteristics research of pressure sensor based on nanopolysilicon thin films resistors

2017 ◽  
Vol 31 (26) ◽  
pp. 1750183
Author(s):  
Xiaofeng Zhao ◽  
Dandan Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
External Pressure ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Microelectromechanical System ◽  
Temperature Characteristics ◽  
X Ray ◽  
Mems Technology

To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a [Formula: see text] orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when [Formula: see text] = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about −1742 ppm/[Formula: see text]C in the range of −40–140[Formula: see text]C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.

High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit

2020 ◽  
Vol 219 ◽  
pp. 111143 ◽  
Author(s):  
Xin Tan ◽  
Yuanjie Lv ◽  
Xingye Zhou ◽  
Xubo Song ◽  
Yuangang Wang ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
High Performance ◽  
Bridge Circuit ◽  
Wheatstone Bridge

FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor

2011 ◽  
Vol 464 ◽  
pp. 208-212
Author(s):  
Hai Bin Pan ◽  
Jian Ning Ding ◽  
Guang Gui Cheng ◽  
Hui Juan Fan
Keyword(s):  
Finite Element ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Fem Simulation ◽  
Sensor Chip ◽  
Stress Distributions ◽  
Island Structure ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Piezoresistive Pressure Sensors

In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.

SIMULATION METHODS OF PIEZORESISTIVE PRESSURE SENSORS IN ORDER TO IMPROVE CONSISTENCY

2012 ◽  
Vol 27 (02) ◽  
pp. 1350011 ◽  
Author(s):  
ZHAOHUA ZHANG ◽  
TIANLING REN ◽  
RUIRUI HAN ◽  
LI YUAN ◽  
BO PANG
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Simulation Method ◽  
Test Results ◽  
Silicon Membrane ◽  
Element Analysis ◽  
Piezoresistive Pressure Sensor ◽  
Consistency Results ◽  
Good Consistency ◽  
Piezoresistive Pressure Sensors

It is important to realize good consistency among different device units on a big wafer. The bad product consistency results from the processing deviation which is hard to control. A novel simulation method to control and reduce the influence of processing deviation on the sensitivity of a piezoresistive pressure sensor is provided in this paper. Based on finite element analysis (FEA) and mathematical integration, the performance of the pressure sensors is simulated. The pressure sensors are designed and fabricated according to the simulation results. The test results confirm that this simulation method can help to design the pressure sensor very precisely. From the simulation and test results, we find that properly enlarging the size of the square silicon membrane can improve the devices consistency.

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