On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

The Electricity Design of Pressure Sensor

2013 ◽  
Vol 438-439 ◽  
pp. 539-542
Author(s):  
Tao Li ◽  
Guo Jing Ren ◽  
Li Feng Qi ◽  
Zhi Min Liu
Keyword(s):  
Mechanical System ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Micro Electro Mechanical System ◽  
Open Loop ◽  
Bridge Design ◽  
Piezoresistive Pressure Sensor ◽  
Working Principle

The relative discussion and research of Micro-Electro-Mechanical System (MEMS) and pressure sensor is carried out in this paper. The working principle of pressure sensor is analyzed, and the cantilever piezoresistive pressure sensor is studied in details. The electricity design of pressure sensor is researched. The open loop Wheatstone-bridge design is adopted in this paper, which adds the freedom of disposing circuit.

Analysis and Validation of Sensing Sensitivity of a Piezoresistive Pressure Sensor

2003 ◽  
Author(s):  
Chun-Te Lin ◽  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Experimental Result ◽  
Design Parameters ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Membrane Geometry ◽  
System Output ◽  
Silicon Based ◽  
Sensing Sensitivity ◽  
Selection Of

In this study, a packaged silicon based piezoresistive pressure sensor is designed, fabricated, and studied. A finite element method (FEM) is adopted for designing and optimizing the sensor performance. Thermal as well as pressure loading on the sensor is applied to make a comparison between experimental and simulation results. Furthermore, a method that transfers the simulation stress data into output voltage is proposed in this study, and the results indicate that the experimental result coincides with the simulation data. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include membrane size/shape and the location of piezoresistor. The findings depict that proper selection of the membrane geometry and piezoresistor location can enhance the sensor sensitivity.

FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor

2011 ◽  
Vol 464 ◽  
pp. 208-212
Author(s):  
Hai Bin Pan ◽  
Jian Ning Ding ◽  
Guang Gui Cheng ◽  
Hui Juan Fan
Keyword(s):  
Finite Element ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Fem Simulation ◽  
Sensor Chip ◽  
Stress Distributions ◽  
Island Structure ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Piezoresistive Pressure Sensors

In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.

Design and Fabrication of an Improved MEMS-Based Piezoresistive Pressure Sensor

2012 ◽  
Vol 482-484 ◽  
pp. 318-321 ◽  
Author(s):  
Zi Jun Song ◽  
Xiang Wang ◽  
Yan Li ◽  
Hai Sheng San ◽  
Yu Xi Yu
Keyword(s):  
Pressure Sensor ◽  
Bridge Circuit ◽  
Wheatstone Bridge ◽  
Lower Surface ◽  
Harsh Environment ◽  
Test Results ◽  
Ansys Software ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Pressure Cavity

An improved piezoresistive pressure sensor is designed for harsh environment application. The highlight of this design is that the Wheatstone bridge circuit is put in lower surface of pressure diaphragm and sealed in the vacuum pressure cavity. The bridge circuit is led out by embedded Al electrodes on bonding surface. ANSYS software has been used to analyze the stress distribution of the diaphragm. By using the MEMS technology, the pressure sensor with the dimension of 1.5mm×1.5mm×500µm is fabricated. The performance of piezoresistive pressure sensor, including output, sensitivity, and nonlinearity, are investigated. The test results show that sensitivity is 20mV/V-MPa and maximum nonlinearity is 2.73%, which meet the requirements for the modern industry.

Investigation of Packaging Effect of Silicon-Based Piezoresistive Pressure Sensor

2006 ◽  
Author(s):  
Chen-Hing Chu ◽  
Tsung-Lin Chou ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
High Performance ◽  
Pressure Sensors ◽  
Design Parameters ◽  
Silicone Gel ◽  
Piezoresistive Pressure Sensor ◽  
Signal Sensitivity ◽  
Silicon Based ◽  
Packaging Effect

The silicon-based pressure sensor is one of the major applications in the MEMS device. Nowadays, the silicon piezoresistive pressure sensor is a mature technology in industry and its measurement accuracy is more rigorous in many advanced applications. In order to operate the piezoresistive pressure sensor in harsh environment, the silicone get is usually used to protect the die surface and wire bond while allowing the pressure signal to be transmitted to the silicon diaphragm. The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. Therefore, the thermal and packaging effects caused by the silicone gel behaviors should be taken into consideration to obtain better sensor accuracy and sensitivity. For this reason, a finite element method (FEM) is adopted for the sensor performance evaluation, and the thermal and pressure loading is applied on the sensor to study the output signal sensitivity as well as the packaging-induced signal variation, thermal/packaging effect reduction, and output signal prediction for the pressure sensors. The design parameters include silicon die size, silicone gel geometry and its material properties. The simulation results show that the smaller die size and the thicker die thickness can reduce the packaging-induced thermal effect. Furthermore, the different geometry of silicone gel also influences the sensitivity of pressure sensor.

The Study of Acceleration Effect for Piezoresistive Micro Pressure Sensor

2013 ◽  
Vol 455 ◽  
pp. 455-459 ◽  
Author(s):  
Bian Tian ◽  
Yu Long Zhao ◽  
Zhe Niu
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Stress Distribution ◽  
Pressure Sensor ◽  
Pressure Measurement ◽  
The Finite Element Method ◽  
Piezoresistive Pressure Sensor ◽  
Traditional Structures ◽  
Acceleration Signals ◽  
Better Than

This paper reports the acceleration effect of a type of piezoresistive pressure sensor for micro-pressure measurement with a cross beam-membrane (CBM) structure. By using the finite element method (FEM) to analyze the stress distribution of the CBM structure and compared with the traditional structures under acceleration signals. Our results show that the sensitivity and linearity of the CBM is better than other structures, but also the acceleration disturb analysis indicating that the CBM structure offers low acceleration interference for micro-pressure measurement in vibration environments.

scholarly journals Reliability Evaluation of Fan-Out Type 3D Packaging-On-Packaging

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 295
Author(s):  
Pao-Hsiung Wang ◽  
Yu-Wei Huang ◽  
Kuo-Ning Chiang
Keyword(s):  
Finite Element ◽  
Thermal Cycling ◽  
Glass Substrate ◽  
High Speed ◽  
Coefficient Of Thermal Expansion ◽  
Three Dimensional ◽  
Design Parameters ◽  
Time To Failure ◽  
Wafer Level ◽  
Fine Pitch

The development of fan-out packaging technology for fine-pitch and high-pin-count applications is a hot topic in semiconductor research. To reduce the package footprint and improve system performance, many applications have adopted packaging-on-packaging (PoP) architecture. Given its inherent characteristics, glass is a good material for high-speed transmission applications. Therefore, this study proposes a fan-out wafer-level packaging (FO-WLP) with glass substrate-type PoP. The reliability life of the proposed FO-WLP was evaluated under thermal cycling conditions through finite element simulations and empirical calculations. Considering the simulation processing time and consistency with the experimentally obtained mean time to failure (MTTF) of the packaging, both two- and three-dimensional finite element models were developed with appropriate mechanical theories, and were verified to have similar MTTFs. Next, the FO-WLP structure was optimized by simulating various design parameters. The coefficient of thermal expansion of the glass substrate exerted the strongest effect on the reliability life under thermal cycling loading. In addition, the upper and lower pad thicknesses and the buffer layer thickness significantly affected the reliability life of both the FO-WLP and the FO-WLP-type PoP.

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