Correction to: Channel Engineering Assisted Performance Enhancement of Metal Gate Sub-10nm Ballistic SiNWFET for Futuristic Device Applications

Abstract In this paper, a novel delta-doped N + Silicon-Germanium Gate Stacked Triple Metal Gate Vertical TFET (Delta doped N + GS TMG VTFET) is proposed and investigated using the Silvaco TCAD simulation tool. Four different combinations were presented and compared with and without the gate stacking method and Si0.2Ge0.8 N + pocket delta-doped layer to render the optimized results. Among all, Delta doped N + GS TMG VTFET structure comes out with a very steep sub-threshold slope (9.75 mV/dec), 40 % lower than the first configuration of TMG VTFET. The inclusion of the N + delta-doped layer between the source and channel and gate will enhance the ON-state drive current performance by reducing the OFF-state leakage current. This happens due to the lower bandgap of the N + delta-doped layer cause narrow BTBT, which results in a high drive current. The Triple metal gate is designed to mitigate the ambipolar conduction by modulating the optimized wok function at 4.15, 4.3, and 4.15 eV. The distribution of the source channel in the vertical structure will enhance the device's scalability due to the electron tunneling moves in the vertical electric field direction. The optimally constructed structure demonstrates improved performance, such as a high ION/IOFF current ratio (~ 1013) and sub-threshold voltage (0.33 V). The results obtained from the proposed device make it suitable for the ultra-low-power device application.

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Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2494080 ◽

2015 ◽

Vol 62 (12) ◽

pp. 4199-4205 ◽

Cited By ~ 8

Author(s):

Qiuxia Xu ◽

Gaobo Xu ◽

Huajie Zhou ◽

Huilong Zhu ◽

Qingqing Liang ◽

...

Keyword(s):

Work Function ◽

Band Edge ◽

Dual Band ◽

Metal Gate ◽

Device Applications ◽

Tin Metal ◽

Ion Implanted

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Performance enhancement and reduction of short channel effects of nano-MOSFET by using graded channel engineering

2013 International Conference on Circuits, Power and Computing Technologies (ICCPCT) ◽

10.1109/iccpct.2013.6529004 ◽

2013 ◽

Cited By ~ 4

Author(s):

S. Panigrahy ◽

P. K. Sahu

Keyword(s):

Performance Enhancement ◽

Short Channel Effects ◽

Short Channel ◽

Channel Engineering ◽

Channel Effects ◽

Nano Mosfet

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Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications

IEEE Electron Device Letters ◽

10.1109/led.2011.2160147 ◽

2011 ◽

Vol 32 (9) ◽

pp. 1197-1199 ◽

Cited By ~ 4

Author(s):

Qiuxia Xu ◽

Gaobo Xu ◽

Qingqing Liang ◽

Yuan Yao ◽

Xiaofeng Duan ◽

...

Keyword(s):

Thermal Stability ◽

Work Function ◽

Band Edge ◽

Metal Gate ◽

Excellent Thermal Stability ◽

Device Applications ◽

Tin Metal

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Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides

Coatings ◽

10.3390/coatings9020137 ◽

2019 ◽

Vol 9 (2) ◽

pp. 137 ◽

Cited By ~ 15

Author(s):

Nengduo Zhang ◽

Jian Sun ◽

Hao Gong

Keyword(s):

Performance Enhancement ◽

Basic Material ◽

Transparent Electronics ◽

Co Doping ◽

Transparent Conducting ◽

Current Review ◽

Conducting Materials ◽

Device Applications ◽

Transparent Conducting Materials ◽

P Type

While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail.

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