Linearly Work-Function Modulated Gate Metal For Hetero Gate Dielectric TFET with Si0.5Ge0.5-Pocket at Source/Channel Junction

Silicon ◽  
2022 ◽  
Author(s):  
Shradhya Singh ◽  
Richa Nr ◽  
Girish Wadhwa ◽  
Sangeeta Singh
Keyword(s):  
Work Function ◽  
Gate Dielectric

Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric

2008 ◽  
Vol 29 (1) ◽  
pp. 50-53 ◽  
Author(s):  
X. P. Wang ◽  
M.-F. Li ◽  
H. Y. Yu ◽  
J. J. Yang ◽  
J. D. Chen ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Dielectric

Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 143-150 ◽  
Author(s):  
Naomi Yoshida ◽  
Xianmin Tang ◽  
Khaled Ahmed ◽  
Giuseppina Conti ◽  
Dave Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Gate Dielectric ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Work Function Tuning ◽  
High K Gate Dielectric

First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts

2005 ◽  
Vol 80 ◽  
pp. 272-279 ◽  
Author(s):  
G. Pourtois ◽  
A. Lauwers ◽  
J. Kittl ◽  
L. Pantisano ◽  
B. Sorée ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Dielectric ◽  
First Principle ◽  
First Principle Calculations ◽  
Dielectric Interfaces

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

2006 ◽  
Vol 27 (1) ◽  
pp. 31-33 ◽  
Author(s):  
X.P. Wang ◽  
Ming-Fu Li ◽  
C. Ren ◽  
X.F. Yu ◽  
C. Shen ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Dielectric ◽  
Metal Gate ◽  
Gate Work Function

A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics

2006 ◽  
Vol 917 ◽  
Author(s):  
Rashmi Jha ◽  
Jiyoung Chung ◽  
Bei Chen ◽  
Robert Nemanich ◽  
Veena Misra
Keyword(s):  
Work Function ◽  
Oxygen Content ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Electrical Measurements ◽  
Mos Capacitors ◽  
Effective Work ◽  
Effective Work Function ◽  
Surface Work ◽  
Surface Work Function

AbstractIn this work we have performed Ultraviolet Photoelectron Spectroscopy (UPS) and X-Ray Photoelectron Spectroscopy (XPS) on: (i) 40Å of Ru deposited on 20Å of ALD-HfO2 (Ru-HfO2), (ii) 40Å of Re deposited on 20Å of ALD-HfO2 (Re-HfO2), and (iii) 40Å of W deposited on 20Å of ALD-HfO2 (W-HfO2) in as deposited as well as after 600˚C in-situ anneal exposure. The samples with Ru and Re indicated significant reduction in the oxygen content and shift in the Hf peaks towards higher binding energy after anneal as compared to the as deposited state. The loss of oxygen after anneal was associated with the reduction in the surface work function of Ru and Re measured by UPS. However, the sample with W showed a redistribution of oxygen after anneal leading to the formation of multiple oxides of W having a net higher surface work function. The spectroscopic measurements were correlated with the electrical measurements made on MOS capacitors with Ru metal gates on HfO2 gate dielectric. The results indicated that the oxygen content at metal/high-k interface plays an important role in governing the effective work function of Ru on HfO2 gate dielectric.

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