Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Enhanced photoluminescent emission of thin phosphor films via pulsed excimer laser melting

1998 ◽  
Vol 13 (11) ◽  
pp. 3019-3021 ◽  
Author(s):  
J. McKittrick ◽  
G. A. Hirata ◽  
C. F. Bacalski ◽  
R. Sze ◽  
J. Mourant ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Emission Intensity ◽  
Chemical Vapor ◽  
Spherical Particles ◽  
Laser Melting ◽  
Sapphire Substrates ◽  
Krf Laser

Thin films of (Y0.92Eu0.08)2O3 were synthesized through chemical vapor deposition of β-diketonate precursors onto glass and sapphire substrates. The films were weakly luminescent in the as-deposited condition and were composed of spherical particles 3 μm in diameter. A KrF laser was pulsed for 25 ns from 1–3 times on the surface of the films. One pulse was sufficient to melt the film and repeated pulses caused ablation of the material. Melting of the film smoothed the surface, increased the density, and increased the photoluminescent emission intensity.

Sign in / Sign up

Export Citation Format

Share Document