scholarly journals Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

2021 ◽  
Vol 10 (3) ◽  
pp. 627-635
Author(s):  
Jing Yan ◽  
Yanling Wang ◽  
Chun-Ming Wang ◽  
Jun Ouyang

AbstractCaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge-discharge cycles) and a good thermal stability (from −170 to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

2020 ◽  
Author(s):  
Jing Yan ◽  
Yanling Wang ◽  
Chun-Ming Wang ◽  
Jun Ouyang

Abstract CaBi 2 Nb 2 O 9 thin film capacitors were fabricated on SrRuO 3 -buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi 2 Nb 2 O 9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density W rec ~69 J/cm 3 and a high energy efficiency η ~82.4%. A superior fatigue-resistance (negligible energy performance degradation after 10 9 charge-discharge cycles) and a good thermal stability (from -170 °C to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.


2015 ◽  
Vol 7 (48) ◽  
pp. 26381-26386 ◽  
Author(s):  
Chang Won Ahn ◽  
Gantsooj Amarsanaa ◽  
Sung Sik Won ◽  
Song A Chae ◽  
Dae Su Lee ◽  
...  

Author(s):  
Fan Zhao ◽  
Yilin Wu ◽  
Yanzhu Dai ◽  
Guangliang Hu ◽  
Ming Liu ◽  
...  

Silicon integrated lead-free oxide thin film capacitors with high energy storage density (Wre), high efficiency (η) and good thermal stability have great application potential in modern communication field. Here, 1...


RSC Advances ◽  
2014 ◽  
Vol 4 (73) ◽  
pp. 38718-38725 ◽  
Author(s):  
Fengyuan Lu ◽  
Tiankai Yao ◽  
Jinling Xu ◽  
Jingxian Wang ◽  
Spencer Scott ◽  
...  

High energy ball milled iodoapatite in the form of an amorphous matrix embedded with nanocrystals can be readily crystallized by subsequent low temperature thermal annealing, which greatly improves the thermal stability and iodine confinement.


2018 ◽  
Vol 18 (11) ◽  
pp. 7739-7748 ◽  
Author(s):  
Bidyut Barman ◽  
Hrishikesh Dhasmana ◽  
Abhishek Verma ◽  
Amit Kumar ◽  
D. N Singh ◽  
...  

2015 ◽  
Vol 66 (5) ◽  
pp. 721-725 ◽  
Author(s):  
Junghyup Hong ◽  
Woochool Jang ◽  
Hyoseok Song ◽  
Chunho Kang ◽  
Hyeongtag Jeon

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