On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...
ABSTRACTTwo problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.
ABSTRACTBased on the artificially controlled super-lateral growth approach, we have developed a novel excimer-laser-based high-substrate-temperature method for producing single-crystal Si islands on SiO2. By irradiating a photolithographically preconfigured sample, complete melting of an Si film is induced only at precisely predesignated locations within patterned and physically isolated islands. An intentionally incompletely melted section within each island initiates lateral growth of crystalline grains. A “bottleneck” portion of the island permits only one of the laterally growing grains to propagate into the main portion of the island. The low nucleation-to-growth-rate ratios that are attainable with high substrate temperatures (1000–1200 °C) can lead to nearly unlimited lateral growth distances; with a proper combination of the substrate temperature and the island dimension, the main area of an island—up to 50×50 μm2 in area—is readily converted into a large single-crystal region.
Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD