Single crystal Cu (110) inducing lateral growth of electrodeposition Li for dendrite-free Li metal-based batteries

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

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Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

Scientific Reports ◽

10.1038/srep44462 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 48

Author(s):

Matthias Schreck ◽

Stefan Gsell ◽

Rosaria Brescia ◽

Martin Fischer

Keyword(s):

Single Crystal ◽

Ion Bombardment ◽

Lateral Growth ◽

Single Crystal Diamond

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Formation of Titanium Silicide At Atmospheric Pressure

MRS Proceedings ◽

10.1557/proc-14-417 ◽

1982 ◽

Vol 14 ◽

Author(s):

Peter Revesz ◽

Jeno Gyimesi ◽

Jozsef Gyulai

Keyword(s):

Silicon Dioxide ◽

Single Crystal ◽

Oxide Layer ◽

Atmospheric Pressure ◽

Titanium Silicide ◽

Lateral Growth ◽

Vertical Growth ◽

High Doses

ABSTRACTTwo problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.

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Excimer-Laser Crystallization of Patterned Si Films At High Temperatures Via Artificially Controlled Super-Lateral Growth

MRS Proceedings ◽

10.1557/proc-397-459 ◽

1995 ◽

Vol 397 ◽

Cited By ~ 2

Author(s):

H. Jin Song ◽

James S. Im

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Excimer Laser ◽

Lateral Growth ◽

Laser Crystallization ◽

High Substrate ◽

Temperature Method ◽

Main Portion ◽

Si Films ◽

Rate Ratios

ABSTRACTBased on the artificially controlled super-lateral growth approach, we have developed a novel excimer-laser-based high-substrate-temperature method for producing single-crystal Si islands on SiO2. By irradiating a photolithographically preconfigured sample, complete melting of an Si film is induced only at precisely predesignated locations within patterned and physically isolated islands. An intentionally incompletely melted section within each island initiates lateral growth of crystalline grains. A “bottleneck” portion of the island permits only one of the laterally growing grains to propagate into the main portion of the island. The low nucleation-to-growth-rate ratios that are attainable with high substrate temperatures (1000–1200 °C) can lead to nearly unlimited lateral growth distances; with a proper combination of the substrate temperature and the island dimension, the main area of an island—up to 50×50 μm2 in area—is readily converted into a large single-crystal region.

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Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

Advanced Materials ◽

10.1002/adma.201604823 ◽

2017 ◽

Vol 29 (16) ◽

pp. 1604823 ◽

Cited By ~ 17

Author(s):

Alexandre Tallaire ◽

Ovidiu Brinza ◽

Vianney Mille ◽

Ludovic William ◽

Jocelyn Achard

Keyword(s):

Single Crystal ◽

Lateral Growth ◽

Single Crystal Diamond

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Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth

Thin Solid Films ◽

10.1016/j.tsf.2015.11.025 ◽

2015 ◽

Vol 597 ◽

pp. 39-43 ◽

Cited By ~ 2

Author(s):

Zhi Liu ◽

Juanjuan Wen ◽

Tianwei Zhou ◽

Chunlai Xue ◽

Yuhua Zuo ◽

...

Keyword(s):

Single Crystal ◽

Lateral Growth ◽

Rapid Melting ◽

Amorphous Si

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Homoepitaxial lateral growth of single-crystal diamond with eliminating PCD rim and enlarging surface area

Vacuum ◽

10.1016/j.vacuum.2021.110820 ◽

2021 ◽

pp. 110820

Author(s):

Wei Cao ◽

Zhibin Ma ◽

Deng Gao ◽

Qiuming Fu ◽

Hongyang Zhao

Keyword(s):

Single Crystal ◽

Surface Area ◽

Lateral Growth ◽

Single Crystal Diamond

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Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium

MRS Proceedings ◽

10.1557/proc-609-a9.3 ◽

2000 ◽

Vol 609 ◽

Cited By ~ 4

Author(s):

Brian J. Greene ◽

Joseph Valentino ◽

Judy L. Hoyt ◽

James F. Gibbons

Keyword(s):

Single Crystal ◽

Amorphous Silicon ◽

Epitaxial Growth ◽

Solid Phase ◽

Single Crystal Silicon ◽

Selective Etching ◽

Lateral Growth ◽

Crystal Silicon ◽

Etch Stop ◽

Etch Stop Layer

ABSTRACTThe fabrication of 250 Å thick, undoped, single crystal silicon on insulator by lateral solid phase epitaxial growth from amorphous silicon on oxide patterned (001) silicon substrates is reported. Amorphous silicon was grown by low pressure chemical vapor deposition at 525°C using disilane. Annealing at temperatures between 540 and 570°C is used to accomplish the lateral epitaxial growth. The process makes use of a Si/Si1-xGex/Si stacked structure and selective etching. The thin Si1-xGex etch stop layer (x=0.2) is deposited in the amorphous phase and crystallized simultaneously with the Si layers. The lateral growth distance of the epitaxial region was 2.5 μm from the substrate seed window. This represents a final lateral to vertical aspect ratio of 100:1 for the single crystal silicon over oxide regions after selective etching of the top sacrificial Si layer. The effects of Ge incorporation on the lateral epitaxial growth process are also discussed. The lateral epitaxial growth rate of 20% Ge alloys is enhanced by roughly a factor of three compared to the rate of Si films at an anneal temperature of 555°C. Increased random nucleation rates associated with Ge alloy films are shown to be an important consideration when employing Si1-xGex to enhance lateral growth or as an etch stop layer.

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