Increased single crystal length in low-pressure, LEC gallium arsenide

1991 ◽  
Vol 109 (1-4) ◽  
pp. 218-223 ◽  
Author(s):  
Hunter D. Marshall
Keyword(s):  
Gallium Arsenide ◽  
Single Crystal ◽  
Low Pressure ◽  
Crystal Length

Radiation of X-rays in Low-Pressure Gas Using LiNbO3 Single Crystal

2008 ◽  
Author(s):  
Shinzo Yoshikado ◽  
Shinji Fukao ◽  
Yoshikazu Nakanishi ◽  
Tadahiro Mizoguchi ◽  
Yoshiaki Ito ◽  
...  
Keyword(s):  
Single Crystal ◽  
Low Pressure ◽  
X Rays

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

scholarly journals Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

2020 ◽  
Vol 62 ◽  
pp. 71-82 ◽  
Author(s):  
Junyun Chen ◽  
Fei Ding ◽  
Xichun Luo ◽  
Xiaoshuang Rao ◽  
Jining Sun
Keyword(s):  
Gallium Arsenide ◽  
Single Crystal ◽  
Diamond Turning ◽  
Fundamental Study

Space grown semi-insulating gallium arsenide single crystal and its application

2002 ◽  
Vol 29 (4) ◽  
pp. 537-540
Author(s):  
N.F. Chen ◽  
X.R. Zhong ◽  
M. Zhang ◽  
L.Y. Lin
Keyword(s):  
Gallium Arsenide ◽  
Single Crystal

Reversible single-crystal-to-single-crystal transformation from a mononuclear complex to a fourfold interpenetrated MOF with selective adsorption of CO2

2015 ◽  
Vol 44 (46) ◽  
pp. 19796-19799 ◽  
Author(s):  
Min-Min Liu ◽  
Yan-Lin Bi ◽  
Qin-Qin Dang ◽  
Xian-Ming Zhang
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Selective Adsorption ◽  
Low Pressure ◽  
Mononuclear Complex ◽  
Crystal Transformation ◽  
Adsorption Of Co ◽  
Adsorption Of Co2

Reversible crystal transformation was observed between a mononuclear complex to a fourfold interpenetrated MOF with selective adsorption of CO2 up to 12.5 wt% at room temperature and low pressure.

Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

1985 ◽  
Vol 47 (11) ◽  
pp. 1187-1189 ◽  
Author(s):  
J. P. Harbison ◽  
D. M. Hwang ◽  
J. Levkoff ◽  
G. E. Derkits
Keyword(s):  
Gallium Arsenide ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 893-897
Author(s):  
C. Aktik ◽  
J. Beerens ◽  
S. Blain ◽  
A. Bsiesy
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Deep Level ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Carbon Incorporation ◽  
Metal Organic

The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better controllability for changing the doping level and the alloy composition. Low-temperature growth is also desirable to reduce the carbon incorporation generated by the decomposition of the organic radicals. In this article we report for the first time the epitaxial growth of gallium arsenide (GaAs) by LPMOCVD at temperatures as low as 510 °C. The vertical reactor that was developed by the authors employs conventional precursors such as trimethylgallium and arsine. By carefully choosing the growth parameters, we were able to grow high-quality GaAs epilayers with good surface morphology at temperatures as low as 510 °C. The carbon incorporation is shown to decrease with decreasing growth temperature without deterioration of the film quality. By carefully controlling the purity of the sources and the gas flow dynamics, we reduced the deep level impurity concentration and obtained reproducible n-type material with residual net donor concentration of 4.4 × 1014 cm−3 and mobility of 92 000 cm2 V−1 s−1 at 77 K.

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