X-ray diffractometric examinations of GaAs epitaxial layers grown by molecular beam epitaxy at low temperature

1993 ◽  
Vol 134 (1-2) ◽  
pp. 151-153 ◽  
Author(s):  
M. Leszczynski ◽  
P. Franzosi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
X Ray

scholarly journals Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3449
Author(s):  
Rodion R. Reznik ◽  
Konstantin P. Kotlyar ◽  
Vladislav O. Gridchin ◽  
Evgeniy V. Ubyivovk ◽  
Vladimir V. Federov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Nanowires ◽  
The Way

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers

2004 ◽  
Vol 831 ◽  
Author(s):  
Rob Armitage ◽  
Kazuhiro Nishizono ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Wetting Layer ◽  
Nucleation Layer ◽  
Lattice Match ◽  
X Ray ◽  
Plane Lattice ◽  
Lattice Matched

ABSTRACTGaN epilayers have been grown by plasma-assisted molecular-beam epitaxy on ZrB2 substrates with close in-plane lattice match. Growth processes utilizing both low-temperature GaN (LT-GaN) and AlN nucleation layers were investigated. The x-ray ω-scan widths for the optimized LT-GaN nucleation process were 400 and 750 arcsec for symmetric and asymmetric reflections, respectively. When using LT-GaN nucleation layers, the chemical incompatibility of ZrB2 results in a high dislocation density despite the in-plane lattice match. The epilayer polarity was N-polar for LT-GaN nucleation layers under all conditions investigated. For AlN nucleation layers, Ga-polar epilayers were obtained under suitable conditions (Al-rich, lower nucleation temperatures) for nominal AlN thickness as low as 1 nm. From RHEED analysis it appears that a psuedomorphic Al wetting layer forms on the ZrB2 surface, and that using AlN as the nucleation layer may offer promise for reducing the epilayer defect density.

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

1998 ◽  
Vol 32 (1) ◽  
pp. 19-25 ◽  
Author(s):  
N. N. Faleev ◽  
V. V. Chaldyshev ◽  
A. E. Kunitsyn ◽  
V. V. Tret’yakov ◽  
V. V. Preobrazhenskii ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Diffraction Study ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray

High‐resolution x‐ray characterization of low‐temperature GaAs/As superlattice grown by molecular‐beam epitaxy

1994 ◽  
Vol 64 (26) ◽  
pp. 3626-3628 ◽  
Author(s):  
T. M. Cheng ◽  
C. Y. Chang ◽  
T. C. Chang ◽  
J. H. Huang ◽  
M. F. Huang
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
X Ray ◽  
Low Temperature Gaas

Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth

2021 ◽  
Author(s):  
Alisha Nanwani ◽  
Ravindra Singh Pokharia ◽  
Jan Schmidt ◽  
H Joerg Osten ◽  
Suddhasatta Mahapatra
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Crystal Quality ◽  
Epitaxial Layers ◽  
High Quality ◽  
Cyclic Annealing

Abstract The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 C) molecular beam epitaxy (MBE) on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 C) and high (500 C) temperatures, does not degrade the crystal quality any further. By promoting adatom downclimb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.

STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

2010 ◽  
Vol 24 (22) ◽  
pp. 4225-4231
Author(s):  
W. S. TAN ◽  
H. L. CAI ◽  
X. S. WU ◽  
K. M. DENG ◽  
H. H. CHENG
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sb Doping

In this paper, with solid source molecular beam epitaxy technique, Si 1-x Ge x( SiGe ) virtual substrates were deposited on low-temperature-grown Si (LT- Si ) buffer layer, which was doped with Sb . The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb -doping in LT- Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT- Si layer acts as surfactant and results in abrupt strain relaxation.

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