Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth

2021 ◽  
Author(s):  
Alisha Nanwani ◽  
Ravindra Singh Pokharia ◽  
Jan Schmidt ◽  
H Joerg Osten ◽  
Suddhasatta Mahapatra
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Crystal Quality ◽  
Epitaxial Layers ◽  
High Quality ◽  
Cyclic Annealing

Abstract The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 C) molecular beam epitaxy (MBE) on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 C) and high (500 C) temperatures, does not degrade the crystal quality any further. By promoting adatom downclimb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

scholarly journals Morphology and surface reconstructions of m-plane GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
J. E. Northrup ◽  
L. Lymperakis ◽  
J. Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Structural Quality ◽  
Surface Reconstructions ◽  
Gan Buffer Layer

ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 20 (3) ◽  
pp. 1221 ◽  
Author(s):  
Gon Namkoong ◽  
W. Alan Doolittle ◽  
April S. Brown ◽  
Maria Losurdo ◽  
Pio Capezzuto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

scholarly journals Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

2021 ◽  
Vol 8 ◽  
Author(s):  
Bing Yan ◽  
Hongyu Liang ◽  
Yongfeng Liu ◽  
Weihua Liu ◽  
Wenhui Yuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Mechanical Polishing ◽  
High Quality ◽  
X Ray ◽  
Atomic Force

Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate surface quality. In this study, the chemical mechanical polishing of GaSb wafers is investigated by considering the effects of the polishing pad, polishing solution, polishing time and pH buffer on their surface morphology and roughness. The surface morphology and root mean square (RMS) roughness of the free-standing wafers are characterized using a white light interferometer, a laser interferometer and an atomic force microscope. X-ray tomography is employed to measure the surface crystalline quality and strain defects of the samples subjected to the polishing treatments. The results show that with the optimum polishing condition, the polished GaSb wafers demonstrate high-quality surfaces without haze, scratches or strain defect regions. The peak to valley value is 5.0 μm and the RMS roughness can be controlled at less than 0.13 nm. A buffer layer grown on the GaSb surface with molecular beam epitaxy is examined via atomic force microscopy and high-resolution X-ray diffraction, which show a low RMS roughness of 0.159 nm, a well-controlled two-dimensional growth mode and a full width half maximum of the Bragg diffraction peak of 14.2”, indicating high-quality GaSb wafers. Thus, this work provides useful guidelines for achieving GaSb wafers with high-quality surfaces that show significant promise for substrate applications.

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