Directional decomposition of some quaternary rare earth sulfides in the electron beam

1987 ◽  
Vol 127 ◽  
pp. 209-218
Author(s):  
J.P. Goral ◽  
Harry A. Eick ◽  
You-Ru Du ◽  
Leroy Eyring
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Directional Decomposition

scholarly journals The pH Value Control of Morphology and Luminescence Properties of Gd2O2S: Tb3+ Phosphors

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 646
Author(s):  
Peng Jiang ◽  
Zhipeng Li ◽  
Wei Lu ◽  
Yi Ma ◽  
Wenhuai Tian
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Ph Value ◽  
Uv Light ◽  
Hexagonal Phase ◽  
Band Gap Energy ◽  
Information Storage ◽  
Luminescence Properties ◽  
Research Fields ◽  
Rare Earth Doped

Developing rare-earth doped oxysulfide phosphors with diverse morphologies has significant value in many research fields such as in displays, medical diagnosis, and information storage. All of the time, phosphors with spherical morphology have been developed in most of the related literatures. Herein, by simply adjusting the pH values of the reaction solution, Gd2O2S:Tb3+ phosphors with various morphologies (sphere-like, sheet-like, cuboid-like, flat square-like, rod-like) were synthesized. The XRD patterns showed that phosphors with all morphologies are pure hexagonal phase of Gd2O2S. The atomic resolution structural analysis by transmission electron microscopy revealed the crystal growth model of the phosphors with different morphology. With the morphological change, the band gap energy of Gd2O2S:Tb3+ crystal changed from 3.76 eV to 4.28 eV, followed by different luminescence performance. The samples with sphere-like and cuboid-like microstructures exhibit stronger cathodoluminescence intensity than commercial product by comparison. Moreover, luminescence of Gd2O2S:Tb3+ phosphors have different emission performance excited by UV light radiation and an electron beam, which when excited by UV light is biased towards yellow, and while excited by an electron beam is biased towards cyan. This finding provides a simple but effective method to achieve rare-earth doped oxysulfide phosphors with diversified and tunable luminescence properties through morphology control.

scholarly journals Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals

2011 ◽  
Vol 120 (1) ◽  
pp. 181-183 ◽  
Author(s):  
G. Gawlik ◽  
J. Sarnecki ◽  
I. Jóźwik ◽  
J. Jagielski ◽  
M. Pawłowska
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Rare Earth Doped

Electron Microprobe and Photoluminescence Analysis of Europium-Doped Gallium Nitride Light Emitters

2002 ◽  
Vol 743 ◽  
Author(s):  
R. W. Martin ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
Y. Nakanishi ◽  
A. Wakahara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Visible Region ◽  
Depth Profiling ◽  
Luminescence Spectra ◽  
Light Emitters ◽  
Doping Density ◽  
Annealing Conditions ◽  
Electron Transitions ◽  
Doped Glass

ABSTRACTRare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014 – 1015 cm−2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which “heal” defects visible in the electron micrographs.

scholarly journals RARE-EARTH PERMANENT MAGNETS AND THEIR APPLICATION IN MAGNETIC SYSTEMS OF TECHNOLOGICAL ELECTRON ACCELERATORS

2021 ◽  
pp. 46-51
Author(s):  
V.A. Bovda ◽  
A.M. Bovda ◽  
I.S. Guk ◽  
V.N. Lyashchenko ◽  
A.O. Mytsykov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Permanent Magnet ◽  
Radiation Resistance ◽  
High Performance ◽  
Permanent Magnets ◽  
Magnetic Systems ◽  
Electron Accelerators ◽  
Advanced Production ◽  
Process Method

High performance rare-earth permanent magnets become crucial components of modern electron accelerators. PLP (pressless process) method was described as the advanced production step in the current rare-earth permanent magnet manufacturing. The radiation resistance of SmCo and Nd-Fe-B magnets under electron beam with 10 and 23 MeV and bremsstrahlung were studied. Dipole magnetic systems on the base of rare-earth permanent magnets were designed for the technological electron accelerators at NSC KIPT.

Gallium Oxide as a Host for Rare Earth Elements

2005 ◽  
Vol 866 ◽  
Author(s):  
J. F. Muth ◽  
P. Gollakota ◽  
A. Dhawan ◽  
H. L. Porter ◽  
Y. N. Saripalli ◽  
...  
Keyword(s):  
Refractive Index ◽  
Electron Beam ◽  
Rare Earth ◽  
Gallium Oxide ◽  
Green Emission ◽  
Host Matrix ◽  
Strong Emission ◽  
Pulsed Electron Beam ◽  
Electron Beam Excitation ◽  
Erbium Doped

AbstractPulsed Electron Beam Deposition (PEBD) and Pulsed Laser Deposition (PLD) were used to grow Gallium Oxide (Ga2O3) thin films on double sided polished sapphire substrates. At 850°C substrate temperature, smooth single crystal β-Ga2O3 films were obtained, which were confirmed with measurements by AFM of RMS surface roughness of about 1 nm. When characterized under electron beam excitation, the films exhibited different responses. For example: Europium doped films emitted intense red emission from 5D0 to 7Fj transitions while exhibiting weak broad emission from 300 to 500 nm. In contrast, Erbium doped films emitted strong emission from 300 to 500 nm peaked at 360 nm that was attributed to defects in the host matrix. Green emission from the Erbium transitions was observed at 528 and 550 nm. Films with different rare earth compositions varying from 0.1 % to 0.4 % were also prepared.High quality natural waveguides were formed with the deposited Ga2O3 films on the lower refractive index substrate sapphire. This was confirmed by measuring the refractive index by prism coupling and sharp coupling spectra.

Electron beam impact: a new route to unusual stoichiometry and rare earth intermediate oxides

1987 ◽  
Vol 140 ◽  
pp. 79-82 ◽  
Author(s):  
M. Gasgnier ◽  
G. Schiffmacher ◽  
D.R. Svoronos ◽  
P.E. Caro
Keyword(s):  
Electron Beam ◽  
Rare Earth

scholarly journals Rare-earth neutral metal injection into an electron beam ion trap plasma

2014 ◽  
Vol 85 (11) ◽  
pp. 11E820 ◽  
Author(s):  
E. W. Magee ◽  
P. Beiersdorfer ◽  
G. V. Brown ◽  
N. Hell
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Ion Trap ◽  
Electron Beam Ion Trap ◽  
Neutral Metal

Study On The Re-Pentaphosphate Crystal Used As The Standardized Sample For The Electron Probe Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 252-253
Author(s):  
Fan GuoChuan ◽  
Zhang Chenting ◽  
Wanshugen Shiji ◽  
YueShuying HongGuangyan
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Electron Probe ◽  
Beam Current ◽  
Element Distribution ◽  
Operating Conditions ◽  
Electron Probe Analysis ◽  
Voltage Electron ◽  
Rare Earth Minerals ◽  
The Stability

Fifteen rare-earth pentaphosphates crystals (see table) were prepared by using the evaporation solution method ,which can be used as the standard sample in electron probe quantitative analysis of rare-earth minerals. Chemical analysis has been made for the composition of the samples and theoretic values . According to Boyd’s method,their homogeneity of element distribution and stability under the irradiation of electron beam were carefully invertigated using ModelEMX-SM7 electron probe.The results indicate that under the normal experiment conditions the homogeneity and stability of the samples are qualified. The inconductive samples were also studied to determine the effects of accelerating voltage,electron beam density (diameter of electron beam, beam current),irradiating time of electron beam and the thickness of evaporation film on the sample current and the stability of numbering. The results show that under the normal operating conditions (accelerative voltage 15KV, sample current 2×10-8A ,diameter of electron beam 4-5um)both sample current and numbering are stable within 5 min when the thickness of evaporation film is about 300 .

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