Liquid phase epitaxy of LiNbO3 thin films for integrated optics

1975 ◽  
Vol 10 (12) ◽  
pp. 1373-1377 ◽  
Author(s):  
A. Baudrant ◽  
H. Vial ◽  
J. Daval
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  

2006 ◽  
Vol 510 (1-2) ◽  
pp. 251-254 ◽  
Author(s):  
Junfang Liu ◽  
Xiaoming He ◽  
Changtai Xia ◽  
Guoqing Zhou ◽  
Shengming Zhou ◽  
...  

2004 ◽  
Vol 266 (4) ◽  
pp. 467-474 ◽  
Author(s):  
Toru Ujihara ◽  
Eiji Kanda ◽  
Kazuo Obara ◽  
Kozo Fujiwara ◽  
Noritaka Usami ◽  
...  

CrystEngComm ◽  
2016 ◽  
Vol 18 (4) ◽  
pp. 608-615 ◽  
Author(s):  
F. Riva ◽  
P.-A. Douissard ◽  
T. Martin ◽  
F. Carlà ◽  
Y. Zorenko ◽  
...  

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.


2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.


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