LPE Growth of Textured KNbO3 Film Using SrTiO3 Substrate and V2O5 Flux

2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Growth Rate ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Film Growth ◽  
Lower Growth ◽  
Lower Growth Temperature

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.

Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

2004 ◽  
Vol 266 (4) ◽  
pp. 467-474 ◽  
Author(s):  
Toru Ujihara ◽  
Eiji Kanda ◽  
Kazuo Obara ◽  
Kozo Fujiwara ◽  
Noritaka Usami ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Silicon Thin Films

scholarly journals Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2047
Author(s):  
Umme Farva ◽  
Hyeong Woo Lee ◽  
RiNa Kim ◽  
Dong-Gun Lee ◽  
Jeha Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Solar Cells ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Film Growth ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Film Growth Rate

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si

1989 ◽  
Vol 148 ◽  
Author(s):  
S. Nozaki ◽  
N. Noto ◽  
M. Okada ◽  
T. Egawa ◽  
T. Soga ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Temperature ◽  
Lower Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Good Surface ◽  
Step Growth ◽  
Higher Temperature ◽  
Lower Growth Temperature

ABSTRACTEffects of growth temperature on crystallinity and surface morphology of MOCVD-grown GaAs-on-Si were studied. The FWHM of the (400) x-ray peak in the rocking curve of GaAs-on-Si reduces from 340 to 230 arcs with increasing growth temperature from 650 to 700°C, but further increase of growth temperature does not significantly decrease the FWHM. The surface morphology of GaAs-on-Si grown at higher temperature is scaly and rough. Lower growth temperature is desirable to obtain GaAs-on-Si with good surface morphology. In order to eliminate the trade-off between crystallinity and surface morphology, the three-step growth process is proposed.

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

Domain engineering in LiNbO3 thin films grown by liquid phase epitaxy

2003 ◽  
Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Domain Engineering

scholarly journals Surface morphology analysis of GaInAsSb films grown by liquid phase epitaxy

2006 ◽  
Vol 36 (3b) ◽  
pp. 1070-1073 ◽  
Author(s):  
L. Tirado-Mejía ◽  
J. G. Ramírez ◽  
M. E. Gómez ◽  
H. Ariza-Calderón
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Morphology Analysis
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