Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

2004 ◽  
Vol 266 (4) ◽  
pp. 467-474 ◽  
Author(s):  
Toru Ujihara ◽  
Eiji Kanda ◽  
Kazuo Obara ◽  
Kozo Fujiwara ◽  
Noritaka Usami ◽  
...  
2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.


2013 ◽  
Author(s):  
Lu Huang ◽  
Jing Jin ◽  
Guohua Wang ◽  
Weimin Shi ◽  
Weiguang Yang ◽  
...  

Author(s):  
Ji-Won Son ◽  
Yin Yuen ◽  
Sergei S. Orlov ◽  
Bill Phillips ◽  
Ludwig Galambos ◽  
...  

2006 ◽  
Vol 36 (3b) ◽  
pp. 1070-1073 ◽  
Author(s):  
L. Tirado-Mejía ◽  
J. G. Ramírez ◽  
M. E. Gómez ◽  
H. Ariza-Calderón

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