Seeded self-ordering of GaAs/AlGaAs quantum wires on non-planar substrates

1995 ◽  
Vol 26 (8) ◽  
pp. 881-886 ◽  
Author(s):  
E. Kapon ◽  
G. Biasiol ◽  
D.M. Hwang ◽  
E. Colas
Keyword(s):  
Quantum Wires ◽  
Planar Substrates

Determination of Optical Properties of the Micro-Facetted InGaAs Quantum Wells and Quantum Wires Using Magnetophotoluminescence

1996 ◽  
Vol 452 ◽  
Author(s):  
Sung-Bock Kim ◽  
Jeong-Rae Ro ◽  
El-Hang Lee
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Wells ◽  
Ground State ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Chemical Beam Epitaxy ◽  
Gaas Substrates ◽  
Planar Substrates

AbstractWe report optical properties of the micro-facetted InGaAs quantum wells and quantum wires on non-planar substrates employing magnetophotoluminescence (MPL). The InGaAs/GaAs structures were grown by chemical beam epitaxy on V-groove patterned GaAs substrates. In the presence of a magnetic field of 18 T, the diamagnetic shifts of exciton ground states of the (001)-and side-QWLs are ΔE=15.6 and 10.3 meV, respectively. In MPL of the facetted microstructure, we found that the different diamagnetic shifts strongly depend on the magnitude of the effective magnetic field as well as the quantum confinement. From comparing the intensities and full widths at half maximum, we easily found that side-QWLs are of higher quality than (OOl)-QWLs. We also fabricated InGaAs/GaAs quantum wires with a size of about 200 Å × (500–600) Å. By fitting the diamagnetic shifts (ΔΕ = 9.5 meV) of the exciton ground state with the calculated results of a variational method, we estimated that the reduced mass of the exciton is approximately 0.052 me.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

High-field magnetoluminescence of ZnSe quantum wires

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  
High Field ◽  
Quantum Wires

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

Effective Dielectric Function of Porous Silicon: the Transverse Component

1994 ◽  
Vol 358 ◽  
Author(s):  
G. Gumbs
Keyword(s):  
Absorption Spectrum ◽  
Absorption Coefficient ◽  
Electron Density ◽  
Quantum Wires ◽  
Interband Transition ◽  
Incident Light ◽  
Transverse Component ◽  
Effect Of Temperature ◽  
High Electron ◽  
Confining Potential

ABSTRACTA self-consistent many-body theory is developed to study the effect of temperature and electron density on the interband absorption coefficient and the frequency-dependent refractive index for an array of isolated quantum wires. The peaks in the absorption coefficient correspond to interband transitions resulting in the resonant absorption of light. The oscillations in the derivative spectrum are due to the quantization of the energy levels related to the in-plane confining potential for such reduced dimensional systems. There are appreciable changes in the absorption spectrum when the electron density or temperature is increased. One interband transition peak is suppressed in the high electron density limit and the thermal depopulation effect on the electron subbands can be easily seen when the temperature is high. We also find that the exciton coupling weakens the shoulder features in the absorption spectrum. This study is relevant to optical characterization of the confining potential and the areal density of electrons using photoreflectance. By using incident light with tunable frequencies in the interband excitation regime, contactless photoreflectance measurements may be carried out and the data compared with our calculations. By fitting the numerical results to the peak positions of the photoreflectance spectrum, the number of electrons in each wire may be extracted.

Ge/Si Quantum Wires for Quantum Computing

2021 ◽  
Author(s):  
Fei Gao ◽  
Jie-Yin Zhang ◽  
Jian-Huan Wang ◽  
Ming Ming ◽  
Tina Wang ◽  
...  
Keyword(s):  
Quantum Computing ◽  
Quantum Wires

scholarly journals Multi-Device Piezoelectric Direct Discharge for Large Area Plasma Treatment

Plasma ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 281-293
Author(s):  
Dariusz Korzec ◽  
Florian Hoppenthaler ◽  
Anatoly Shestakov ◽  
Dominik Burger ◽  
Andrej Shapiro ◽  
...  
Keyword(s):  
Atmospheric Pressure Plasma ◽  
Energy Coupling ◽  
Limiting Factors ◽  
Dielectric Barrier Discharges ◽  
Large Area ◽  
Image Recording ◽  
Cold Atmospheric Pressure Plasma ◽  
Planar Substrates ◽  
Barrier Discharges ◽  
Direct Discharge

The piezoelectric cold plasma generators (PCPG) allow for production of the piezoelectric direct discharge (PDD), which is a kind of cold atmospheric pressure plasma (APP). The subjects of this study are different arrays of PCPGs for large-area treatment of planar substrates. Two limiting factors are crucial for design of such arrays: (i) the parasitic coupling between PCPGs resulting in minimum allowed distance between devices, and (ii) the homogeneity of large area treatment, requiring an overlap of the activation zones resulting from each PCPG. The first limitation is investigated by the use of electric measurements. The minimum distance for operation of 4 cm between two PCPGs is determined by measurement of the energy coupling from an active PCPG to a passive one. The capacitive probe is used to evaluate the interference between signals generated by two neighboring PCPGs. The second limitation is examined by activation image recording (AIR). Two application examples illustrate the compromising these two limiting factors: the treatment of large area planar substrates by PCPG array, and the pretreatment of silicon wafers with an array of PCPG driven dielectric barrier discharges (DBD).

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